Stripe-ordered domains with perpendicular magnetic anisotropy have been intensively investigated due to their potential applications in high-density magnetic data-storage devices. However, the conventional control methods (e.g., epitaxial strain, local heating, magnetic field, and magnetoelectric effect) of the stripe-ordered domain walls either cannot meet the demands for miniaturization and low power consumption of spintronic devices or require high strength of the electric field due to the small value of the magnetoelectric effect at room temperature. Here, a domain-wall resistive effect of 0.1% was clarified in La0.67Sr0.33MnO3 thin films between the configurations of current in the plane and perpendicular to the plane of walls. Furthermore, a reversible nanoscale control of the domain-wall re-orientation by vertical spin transfer torque across the probe/film interface was achieved, where a probe voltage of 0.1 V was applied on a manganite-based capacitor. We also demonstrated that the stripe-ordered ...

中文翻译：

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在 La0.67Sr0.33MnO3 薄膜中通过垂直自旋转移扭矩纳米级控制条纹有序磁畴壁

由于其在高密度磁数据存储设备中的潜在应用，具有垂直磁各向异性的条纹有序畴已被深入研究。然而，条状有序畴壁的常规控制方法（如外延应变、局部加热、磁场和磁电效应）要么不能满足自旋电子器件的小型化和低功耗的要求，要么需要高强度的电场。由于室温下磁电效应的值很小。在这里，在 La0.67Sr0.33MnO3 薄膜中，在平面内和垂直于壁面的电流配置之间澄清了 0.1% 的畴壁电阻效应。此外，通过探针/薄膜界面上的垂直自旋转移扭矩实现了畴壁重新定向的可逆纳米级控制，其中在锰基电容器上施加了 0.1 V 的探针电压。我们还证明了条带排序......