Highly In‐Plane Optical and Electrical Anisotropy of 2D Germanium Arsenide,Advanced Functional Materials

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Highly In‐Plane Optical and Electrical Anisotropy of 2D Germanium Arsenide
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2018-02-16 , DOI: 10.1002/adfm.201707379
Shengxue Yang ₁ , Yanhan Yang ₂ , Minghui Wu ₃ , Chunguang Hu ₄ , Wanfu Shen ₄ , Yongji Gong ₁ , Li Huang ₃ , Chengbao Jiang ₁ , Yongzhe Zhang ₂ , Pulickel M. Ajayan ₅

Affiliation

Anisotropic 2D materials exhibit unique optical, electrical, and thermoelectric properties that open up possibilities for diverse angle‐dependent devices. However, the explored anisotropic 2D materials are very limited and the methods to identify the crystal orientations and to study the in‐plane anisotropy are in the initial stage. Here azimuth‐dependent reflectance difference microscopy (ADRDM), angle‐resolved Raman spectra, and electrical transport measurements are used to systematically characterize the influence of the anisotropic structure on in‐plane optical and electrical anisotropy of 2D GeAs, a novel group IV–V semiconductor. It is proved that ADRDM offers a way to quickly identify the crystal orientations and also to directly characterize the in‐plane optical anisotropy of layered GeAs. The anisotropic electrical transport behavior of few‐layer GeAs field‐effect transistors is further measured and the anisotropic ratio of the mobility is as high as 4.6, which is higher than the other 2D anisotropic materials such as black phosphorus. The dependence of the Raman intensity anisotropy on the sample thickness, excitation wavelength, and polarization configuration is investigated both experimentally and theoretically. These data will be useful for designing new high‐performance devices and the results suggest a general methodology for characterizing the in‐plane anisotropy of low‐symmetry 2D materials.

中文翻译：

二维砷化锗的高度面内光学和电学各向异性

各向异性2D材料具有独特的光学，电和热电特性，为各种角度相关的设备开辟了可能性。但是，探索的各向异性二维材料非常有限，识别晶体取向和研究面内各向异性的方法还处于初期阶段。在这里，使用方位角相关的反射率差显微镜（ADRDM），角度分辨拉曼光谱和电传输测量来系统地表征各向异性结构对二维GeA（一种新颖的IV–V组）的面内光学和电学各向异性的影响半导体。事实证明，ADRDM提供了一种快速识别晶体取向并直接表征层状GeAs的面内光学各向异性的方法。进一步测量了几层GeAs场效应晶体管的各向异性电输运行为，迁移率的各向异性比高达4.6，这比其他2D各向异性材料（如黑磷）要高。通过实验和理论研究了拉曼强度各向异性对样品厚度，激发波长和偏振构型的依赖性。这些数据对于设计新的高性能器件将是有用的，并且结果表明了表征低对称2D材料的面内各向异性的通用方法。通过实验和理论研究了拉曼强度各向异性对样品厚度，激发波长和偏振构型的依赖性。这些数据对于设计新的高性能器件将是有用的，并且结果表明了表征低对称2D材料的面内各向异性的通用方法。通过实验和理论研究了拉曼强度各向异性对样品厚度，激发波长和偏振构型的依赖性。这些数据对于设计新的高性能器件将是有用的，并且结果表明了表征低对称2D材料的面内各向异性的通用方法。

更新日期：2018-02-16

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