Group‐10 layered transitional metal dichalcogenides including PtS₂, PtSe₂, and PtTe₂ are excellent potential candidates for optoelectronic devices due to their unique properties such as high carrier mobility, tunable bandgap, stability, and flexibility. Large‐area platinum diselenide (PtSe₂) with semiconducting characteristics is far scarcely investigated. Here, the development of a high‐performance photodetector based on vertically aligned PtSe₂‐GaAs heterojunction which exhibits a broadband sensitivity from deep ultraviolet to near‐infrared light, with peak sensitivity from 650 to 810 nm, is reported. The I_light/I_dark ratio and responsivity of photodetector are 3 × 10⁴ and 262 mA W⁻¹ measured at 808 nm under zero bias voltage. The response speed of τ_r/τ_f is 5.5/6.5 µs, which represents the best result achieved for Group‐10 TMDs based optoelectronic device thus far. According to first‐principle density functional theory, the broad photoresponse ranging from visible to near‐infrared region is associated with the semiconducting characteristics of PtSe₂ which has interstitial Se atoms within the PtSe₂ layers. It is also revealed that the PtSe₂/GaAs photodetector does not exhibit performance degradation after six weeks in air. The generality of the above good results suggests that the vertically aligned PtSe₂ is an ideal material for high‐performance optoelectronic systems in the future.

中文翻译：

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基于垂直对准的PtSe2 / GaAs异质结的快速，自驱动，空气稳定和宽带光电探测器

包括PtS ₂，PtSe ₂和PtTe ₂在内的第10组分层过渡金属_二卤化物由于具有高载流子迁移率，可调带隙，稳定性和柔韧性等独特特性，是光电器件的极佳潜在候选者。几乎没有研究过具有半导体特性的大面积二硒化铂（PtSe ₂）。在此，据报道开发了一种基于垂直排列的PtSe ₂ -GaAs异质结的高性能光电探测器，该探测器在从深紫外光到近红外光方面表现出宽带灵敏度，峰值灵敏度在650至810 nm之间。在我_光/我_暗在零偏置电压下，在808 nm处测得的光电探测器的比率和响应度为3×10 ⁴和262 mA W ^-1。τ的响应速度_{- [R} /τ _˚F是5.5 / 6.5微秒，这代表了10族TMD的实现最好的结果基于光电子装置迄今。根据第一原理密度泛函理论，从可见光到近红外区域的宽广的光响应与PtSe ₂的半导体特性有关，该特性在PtSe ₂层内具有填隙性Se原子。还揭示了PtSe ₂/ GaAs光电探测器在空气中放置六周后不会出现性能下降的情况。上述良好结果的普遍性表明，垂直排列的PtSe ₂是未来高性能光电系统的理想材料。