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CdS Nanoribbon‐Based Resistive Switches with Ultrawidely Tunable Power by Surface Charge Transfer Doping
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2018-02-15 , DOI: 10.1002/adfm.201706577 Zhibin Shao 1 , Jiansheng Jie 1 , Tianhao Jiang 1 , Xiaofeng Wu 1 , Ke Li 1 , Feifei Xia 1 , Xiujuan Zhang 1 , Xiaohong Zhang 1
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2018-02-15 , DOI: 10.1002/adfm.201706577 Zhibin Shao 1 , Jiansheng Jie 1 , Tianhao Jiang 1 , Xiaofeng Wu 1 , Ke Li 1 , Feifei Xia 1 , Xiujuan Zhang 1 , Xiaohong Zhang 1
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Traditional metal–insulator–metal (MIM)‐based resistive switches (RS) possess a high operating current, which can be read directly without an amplifier yet will inevitably produce large power consumption. Rational control of the energy consumption of RS devices is surely desirable to achieve the energy‐efficient purpose in a variety of practical applications. Here a surface charge transfer doping (SCTD) strategy is reported to manipulate the operating current as well as power consumption of the RS devices by using doped CdS nanoribbon (NR) as a rheostat. By controlling the concentration of surface dopant of MoO3, the conductivity of doped CdS NR can be tuned in a wide range of nine orders of magnitude, showing the transition from insulator to semiconductor and to conductor. On the basis of CdS NRs with controllable conductivity, the as‐fabricated RS devices exhibit an ultrawidely tunable‐power consumption from 1 nW, the lowest value reported so far, to 0.1 mW, which is close to the typical values of MIM‐based RS devices. In view of the high controllability of the SCTD method, this work opens up unique opportunities for future energy‐efficient, performance‐tunable, and multifunctional RS devices based on semiconductor nanostructures.
中文翻译：
通过表面电荷转移掺杂实现基于CdS纳米带的电阻开关，具有超宽可调谐功率
传统的基于金属-绝缘体-金属（MIM）的电阻开关（RS）具有较高的工作电流，无需放大器即可直接读取，但不可避免地会产生大量功耗。为了实现各种实际应用中的节能目的，对RS设备的能耗进行合理控制是必不可少的。在这里，据报道表面电荷转移掺杂（SCTD）策略通过使用掺杂的CdS纳米带（NR）作为变阻剂来控制RS器件的工作电流和功耗。通过控制MoO 3的表面掺杂剂浓度掺杂的CdS NR的电导率可以在九个数量级的宽范围内进行调节，显示出从绝缘体到半导体再到导体的过渡。基于电导率可控的CdS NR，预制的RS器件具有极宽的可调功耗，范围从目前报告的最低值1 nW到0.1 mW，接近基于MIM的RS的典型值。设备。鉴于SCTD方法的高度可控性，这项工作为基于半导体纳米结构的未来节能，性能可调和多功能RS器件开辟了独特的机会。
更新日期：2018-02-15
中文翻译：
通过表面电荷转移掺杂实现基于CdS纳米带的电阻开关，具有超宽可调谐功率
传统的基于金属-绝缘体-金属（MIM）的电阻开关（RS）具有较高的工作电流，无需放大器即可直接读取，但不可避免地会产生大量功耗。为了实现各种实际应用中的节能目的，对RS设备的能耗进行合理控制是必不可少的。在这里，据报道表面电荷转移掺杂（SCTD）策略通过使用掺杂的CdS纳米带（NR）作为变阻剂来控制RS器件的工作电流和功耗。通过控制MoO 3的表面掺杂剂浓度掺杂的CdS NR的电导率可以在九个数量级的宽范围内进行调节，显示出从绝缘体到半导体再到导体的过渡。基于电导率可控的CdS NR，预制的RS器件具有极宽的可调功耗，范围从目前报告的最低值1 nW到0.1 mW，接近基于MIM的RS的典型值。设备。鉴于SCTD方法的高度可控性，这项工作为基于半导体纳米结构的未来节能，性能可调和多功能RS器件开辟了独特的机会。
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