Abstract (CaBi4Ti4O15)1-x(Bi4Ti3O12)x (CBT-xBIT) Aurivillius phase ceramics were synthesized by the conventional solid reaction method. The evolution of the structure and the electrical properties of CBT-xBIT ceramics were systematically investigated. Due to the enhanced spontaneous polarization induced by internal stresses on the Bi2O2 layers in the CBT-xBIT structure, the optimal piezoelectric coefficient (d33 ~ 13 pC/N) was obtained in the ceramics with x = 0.3 while exhibiting a relatively good thermal stability in the temperature range of 20–700 °C. The dc resistivity (ρdc) of the CBT-xBIT ceramics exhibited a higher value (≥ 109 Ω cm) at room temperature, and the tan δ value of CBT-xBIT (x= 0, 0.1 and 0.3) within the temperature range of 20–500 °C maintained stability as a result of the domain structure and point defect concentration in the ceramics. In addition, a distinctive double dielectric peak anomaly was observed in the er-T curves of the CBT-xBIT (x= 0.3, 0.5 and 0.7) ceramics, and it plays a remarkable role in the thermal stability of the piezoelectricity of CBT-xBIT ceramics. As a result, such research can benefit high temperature practical piezoelectric devices.

中文翻译：

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Aurivilius 相 (CaBi 4 Ti 4 O 15 ) 1-x (Bi 4 Ti 3 O 12 ) x 陶瓷的微观结构和电性能演变

摘要 (CaBi4Ti4O15)1-x(Bi4Ti3O12)x (CBT-xBIT) Aurivilius 相陶瓷采用常规固相反应法合成。系统地研究了 CBT-xBIT 陶瓷的结构和电性能的演变。由于 CBT-xBIT 结构中 Bi2O2 层上的内应力引起的自发极化增强，在 x = 0.3 的陶瓷中获得了最佳压电系数（d33 ~ 13 pC/N），同时在陶瓷中表现出相对良好的热稳定性温度范围为 20–700 °C。CBT-xBIT 陶瓷的直流电阻率 (ρdc) 在室温下表现出较高的值 (≥ 109 Ω cm)，CBT-xBIT 的 tan δ 值 (x= 0、0.1 和 0. 3) 由于域结构和陶瓷中的点缺陷浓度，在 20–500 °C 的温度范围内保持稳定性。此外，在CBT-xBIT（x=0.3、0.5和0.7）陶瓷的er-T曲线中观察到明显的双介电峰异常，这对CBT-xBIT的压电热稳定性起到了显着的作用陶瓷。因此，这样的研究可以使高温实用的压电器件受益。