Tunable Tribotronic Dual‐Gate Logic Devices Based on 2D MoS2 and Black Phosphorus,Advanced Materials

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Tunable Tribotronic Dual‐Gate Logic Devices Based on 2D MoS2 and Black Phosphorus
Advanced Materials ( IF 27.4 ) Pub Date : 2018-02-13 , DOI: 10.1002/adma.201705088
Guoyun Gao _{1,

2} , Bensong Wan _{1,

3} , Xingqiang Liu ₁ , Qijun Sun _{1,

2} , Xiaonian Yang _{1,

2} , Longfei Wang _{1,

2} , Caofeng Pan _{1,

2} , Zhong Lin Wang _{1,

2,

4}

Affiliation

With the Moore's law hitting the bottleneck of scaling‐down in size (below 10 nm), personalized and multifunctional electronics with an integration of 2D materials and self‐powering technology emerge as a new direction of scientific research. Here, a tunable tribotronic dual‐gate logic device based on a MoS₂ field‐effect transistor (FET), a black phosphorus FET and a sliding mode triboelectric nanogenerator (TENG) is reported. The triboelectric potential produced from the TENG can efficiently drive the transistors and logic devices without applying gate voltages. High performance tribotronic transistors are achieved with on/off ratio exceeding 106 and cutoff current below 1 pA μm^–1. Tunable electrical behaviors of the logic device are also realized, including tunable gains (improved to ≈13.8) and power consumptions (≈1 nW). This work offers an active, low‐power‐consuming, and universal approach to modulate semiconductor devices and logic circuits based on 2D materials with TENG, which can be used in microelectromechanical systems, human–machine interfacing, data processing and transmission.

中文翻译：

基于2D MoS2和黑磷的可调谐摩擦双门逻辑器件

随着摩尔定律成为缩小尺寸（小于10 nm）的瓶颈，集成了2D材料和自供电技术的个性化多功能电子产品成为科学研究的新方向。在此，报告了一种基于MoS ₂场效应晶体管（FET），黑磷FET和滑模摩擦电纳米发电机（TENG）的可调谐摩擦电子双门逻辑器件。TENG产生的摩擦电势可以有效地驱动晶体管和逻辑器件，而无需施加栅极电压。实现了高性能摩擦电子晶体管，其开/关比超过106，截止电流低于1 pAμm ^–1。还实现了逻辑器件的可调电性能，包括可调增益（提高至≈13.8）和功耗（≈1nW）。这项工作提供了一种主动，低功耗，通用的方法，利用TENG调制基于2D材料的半导体器件和逻辑电路，可用于微机电系统，人机界面，数据处理和传输。

更新日期：2018-02-13

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