Breaking the Current‐Retention Dilemma in Cation‐Based Resistive Switching Devices Utilizing Graphene with Controlled Defects,Advanced Materials

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Breaking the Current‐Retention Dilemma in Cation‐Based Resistive Switching Devices Utilizing Graphene with Controlled Defects
Advanced Materials ( IF 27.4 ) Pub Date : 2018-02-13 , DOI: 10.1002/adma.201705193
Xiaolong Zhao _{1,

2} , Jun Ma _{3,

4} , Xiangheng Xiao ₂ , Qi Liu _{1,

4,

5} , Lin Shao ₆ , Di Chen ₇ , Sen Liu ₁ , Jiebin Niu _{1,

4,

5} , Xumeng Zhang _{1,

4} , Yan Wang ₁ , Rongrong Cao _{1,

4} , Wei Wang ₁ , Zengfeng Di ₃ , Hangbing Lv _{1,

4,

5} , Shibing Long _{1,

4,

5} , Ming Liu _{1,

4,

5}

Affiliation

Cation‐based resistive switching (RS) devices, dominated by conductive filaments (CF) formation/dissolution, are widely considered for the ultrahigh density nonvolatile memory application. However, the current‐retention dilemma that the CF stability deteriorates greatly with decreasing compliance current makes it hard to decrease operating current for memory application and increase driving current for selector application. By centralizing/decentralizing the CF distribution, this current‐retention dilemma of cation‐based RS devices is broken for the first time. Utilizing the graphene impermeability, the cation injecting path to the RS layer can be well modulated by structure‐defective graphene, leading to control of the CF quantity and size. By graphene defect engineering, a low operating current (≈1 µA) memory and a high driving current (≈1 mA) selector are successfully realized in the same material system. Based on systematically materials analysis, the diameter of CF, modulated by graphene defect size, is the major factor for CF stability. Breakthrough in addressing the current‐retention dilemma will instruct the future implementation of high‐density 3D integration of RS memory immune to crosstalk issues.

中文翻译：

利用具有受控缺陷的石墨烯打破基于阳离子的电阻式开关设备中的电流保持难题

在超高密度非易失性存储器应用中，以导电丝（CF）形成/溶解为主导的基于阳离子的电阻开关（RS）器件已被广泛考虑。但是，CF稳定性随着顺从电流的降低而大大恶化的电流保持难题，使得难以降低存储器应用的工作电流并难以增加选择器应用的驱动电流。通过集中/分散CF分布，首次打破了基于阳离子的RS设备的电流保持难题。利用石墨烯的不渗透性，结构缺陷的石墨烯可以很好地调节到RS层的阳离子注入路径，从而控制CF的数量和大小。通过石墨烯缺陷工程，在同一材料系统中，成功实现了低工作电流（≈1µA）存储器和高驱动电流（≈1mA）选择器。根据系统的材料分析，受石墨烯缺陷尺寸调节的CF直径是CF稳定性的主要因素。解决当前保留难题的突破将指导将来实现不受串扰问题影响的RS存储器高密度3D集成的实现。

更新日期：2018-02-13

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