Abstract The conduction type in (Zn,Sn,Mn)As2 thin films grown by molecular beam epitaxy (MBE) on InP substrates was found to be controllable from p-type to n-type as a function of Mn content. n-type (Zn,Sn,Mn)As2 thin films were obtained by Mn doping of more than approximately 11 cat.%. It is likely that Mn interstitials (MnI) incorporated by excess Mn doping are located at tetrahedral hollow spaces surrounded by Zn and Sn cation atoms and four As atoms, which are expected to act as donors in (Zn,Sn,Mn)As2, resulting in n-type conduction. The effect of annealing on the structural, electrical and magnetic properties of n-type (Zn,Sn,Mn)As2 thin films was investigated as functions of annealing temperature and time. It was revealed that even if the annealing temperature is considerably higher than the growth temperature of 320 °C, the magnetic properties of the thin films remain stable. This suggests that a MnI complex surrounded by Zn and Sn atoms is thermally stable during high-temperature annealing. The n-type (Zn,Sn,Mn)As2 thin films may be suitable for application as n-type spin-polarized injectors.

中文翻译：

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通过改变Mn含量和退火对n型导电薄膜的影响来控制铁磁(Zn,Sn,Mn)As 2 薄膜的导电类型

摘要 发现通过分子束外延 (MBE) 在 InP 衬底上生长的 (Zn,Sn,Mn)As2 薄膜的导电类型可以从 p 型到 n 型作为 Mn 含量的函数进行控制。n 型 (Zn,Sn,Mn)As2 薄膜是通过 Mn 掺杂超过大约 11 cat.% 获得的。通过过量 Mn 掺杂引入的 Mn 填隙物 (MnI) 很可能位于被 Zn 和 Sn 阳离子原子以及四个 As 原子包围的四面体中空空间，预计它们将作为 (Zn,Sn,Mn)As2 的供体，导致在 n 型传导中。作为退火温度和时间的函数，研究了退火对 n 型 (Zn,Sn,Mn)As2 薄膜的结构、电学和磁学性能的影响。结果表明，即使退火温度远高于 320°C 的生长温度，薄膜的磁性保持稳定。这表明被 Zn 和 Sn 原子包围的 MnI 复合物在高温退火过程中是热稳定的。n 型 (Zn,Sn,Mn)As2 薄膜可能适合用作 n 型自旋极化注入器。