Photothermal‐Induced Nanowelding of Metal–Semiconductor Heterojunction in Integrated Nanowire Units,Advanced Electronic Materials

当前位置： X-MOL 学术 › Adv. Electron. Mater. › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Photothermal‐Induced Nanowelding of Metal–Semiconductor Heterojunction in Integrated Nanowire Units
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2018-02-12 , DOI: 10.1002/aelm.201700614
Pintu Ghosh ₁ , Jinsheng Lu ₁ , Ziyao Chen ₁ , Hangbo Yang ₁ , Min Qiu ₁ , Qiang Li ₁

Affiliation

An improvised and comparatively inexpensive method for welding semiconductors and metal nanowires (NWs) utilizing a plasmon‐enhanced photothermal effect is presented in this article. Different types of heterojunction‐based (single Schottky junction and back‐to‐back Schottky junctions) electronic nanodevices are fabricated by welding various combinations of silver and ZnO NWs on two gold electrodes using continuous wave laser (λ = 532 nm) shots. It is inferred from the current–voltage characteristic curves of these devices that the junction formed between the ZnO nanowire (NW) and the gold electrode demonstrates Schottky barrier‐like behavior, whereas the junctions between silver‐and‐gold and silver‐and‐ZnO behave like ohmic contacts. The maximum currents obtained for a single Schottky junction and back‐to‐back Schottky junctions corresponding to the applied bias voltage 40 V are 42 µA and 7 µA, respectively. This plasmon‐enhanced nanowelding technique extends the range of applications of nanowelding in fabrication of electronic nanodevices.

中文翻译：

集成纳米线单元中金属-半导体异质结的光热诱导纳米焊接

本文介绍了一种利用等离激元增强的光热效应焊接半导体和金属纳米线（NW）的简易且相对便宜的方法。通过使用连续波激光（λ= 532 nm）发射，在两个金电极上焊接银和ZnO NW的各种组合，制造了不同类型的基于异质结的（单肖特基结和背对背肖特基结）电子纳米器件。从这些器件的电流-电压特性曲线可以推断，ZnO纳米线（NW）和金电极之间形成的结表现出肖特基势垒行为，而银金和银与ZnO之间的结表现为肖特基势垒。表现得像欧姆接触。单个肖特基结和背对背肖特基结所获得的最大电流分别对应于施加的40 V偏置电压为42 µA和7 µA。这种等离激元增强的纳米焊接技术扩展了纳米焊接在电子纳米器件制造中的应用范围。

更新日期：2018-02-12

点击分享查看原文

点击收藏

阅读更多本刊最新论文本刊介绍/投稿指南11