State Key Laboratory of Optoelectronic Materials and Technologies; School of Materials; Sun Yat-sen University; Guangzhou 510275 P. R. China
Radiation Detection Research Center; Northwest Institute of Nuclear Technology; P.O. Box 69-9 Xi'an Shanxi 710024 P. R. China
School of Nuclear Science and Technology; Xi'an Jiaotong University; Xi'an 710049 P. R. China
New Energy Research Institute; School of Environment and Energy; South China University of Technology; Guangzhou 510006 P. R. China
Department of Chemistry; Zhejiang University; Hangzhou 310000 P. R. China
State Key Laboratory of Particle Detection and Electronics; School of Physical Sciences; University of Science and Technology of China; Hefei 230040 P. R. China
Institute of High Energy Physics; Chinese Academy of Sciences; Beijing 100049 P. R. China
School of Radiation Medicine and Protection; Soochow University; Suzhou 510006 P. R. China
Controllable and repeatable crystal‐imperfection‐modulation engineering (CIME) is important for the development of semiconductor science and technology. A universal and feasible CIME for ZnO based on creative electrochemical doping and strong oxidizing thermodynamic annealing processes is described by Feng Huang, Xiaoping Ouyang, and co‐workers in article number 1700307. Their method could be of major benefit for new wide‐band‐gap semiconductor devices.
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