Precisely controllable and reversible p/n‐type electronic doping of molybdenum ditelluride (MoTe₂) transistors is achieved by electrothermal doping (E‐doping) processes. E‐doping includes electrothermal annealing induced by an electric field in a vacuum chamber, which results in electron (n‐type) doping and exposure to air, which induces hole (p‐type) doping. The doping arises from the interaction between oxygen molecules or water vapor and defects of tellurium at the MoTe₂ surface, and allows the accurate manipulation of p/n‐type electrical doping of MoTe₂ transistors. Because no dopant or special gas is used in the E‐doping processes of MoTe₂, E‐doping is a simple and efficient method. Moreover, through exact manipulation of p/n‐type doping of MoTe₂ transistors, quasi‐complementary metal oxide semiconductor adaptive logic circuits, such as an inverter, not or gate, and not and gate, are successfully fabricated. The simple method, E‐doping, adopted in obtaining p/n‐type doping of MoTe₂ transistors undoubtedly has provided an approach to create the electronic devices with desired performance.

中文翻译：

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通过电热掺杂可逆且精确可控的MoTe2晶体管p / n型掺杂

通过电热掺杂（E-doping）工艺可以精确控制和可逆地对二碲化钼（MoTe ₂）晶体管进行p / n型电子掺杂。电子掺杂包括由真空室中的电场引起的电热退火，这会导致电子（n型）掺杂和暴露于空气中，从而导致空穴（p型）掺杂。掺杂源于MoTe ₂表面的氧分子或水蒸气与碲缺陷之间的相互作用，并允许对MoTe ₂晶体管的p / n型电掺杂进行精确控制。因为在MoTe ₂的电子掺杂过程中没有使用任何掺杂剂或特殊气体，电子掺杂是一种简单而有效的方法。此外，通过精确控制MoTe ₂晶体管的p / n型掺杂，可以成功地制造准互补金属氧化物半导体自适应逻辑电路，例如反相器，非或非门，非与非门。毫无疑问，用于获得MoTe ₂晶体管的p / n型掺杂的简单方法E掺杂为创建具有所需性能的电子设备提供了一种方法。