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Intergranular amorphous films formed by DC electric field in pure zirconia
Journal of the American Ceramic Society ( IF 3.9 ) Pub Date : 2018-02-19 , DOI: 10.1111/jace.15485
Nobuhiro Morisaki 1 , Hidehiro Yoshida 2 , Tetsuro Kobayashi 1 , Tomoharu Tokunaga 1 , Takahisa Yamamoto 1
Affiliation  

It is difficult to obtain pure ZrO2 sintered compacts with a bulk style at room temperature because a large volumetric expansion from tetragonal to monoclinic phase (t/m) transformation occurs at around 1000°C, which is lower than the sintering temperature. In contrast, pure monoclinic ZrO2 can be consolidated without shattering using flash‐sintering at 1350°C for 5 minutes under an applied DC electric field of 175 V/cm. High‐resolution transmission electron microscopy and electron energy loss spectroscopy have revealed that amorphous films are formed along grain boundaries after flash‐sintering at 1350°C for 5 minutes. Monoclinic ZrO2 flash‐sintered compact including the amorphous films are able to survive without shattering through the t/m transformation, as the amorphous films partially absorb the large volumetric expansion arising from the t/m transformation. The formation of the amorphous films results from the severe reducing condition due to the applied DC electric fields during flash‐sintering.

中文翻译:

纯氧化锆中直流电场形成的晶间非晶膜

在室温下很难获得具有块状的纯ZrO 2烧结体,因为在大约1000℃左右会发生从四方相到单斜晶相(t / m)的大体积膨胀,这低于烧结温度。相比之下,纯单斜晶ZrO 2可以在175 V / cm的直流电场下于1350°C进行5分钟的闪蒸烧结,而不会破碎,而不会破碎。高分辨率透射电子显微镜和电子能量损失光谱显示,在1350°C进行5分钟的快速烧结后,沿晶界形成了非晶膜。单斜氧化锆2包括非晶态膜的快速烧结压块能够在不经历t / m转变的情况下生存下来,因为非晶态膜部分吸收了t / m转变引起的大体积膨胀。非晶膜的形成是由于在快速烧结过程中由于施加的直流电场而导致的严重还原条件所致。
更新日期:2018-02-19
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