A Tunable Multigate Indium‐Tin‐Oxide‐Assisted All‐Dielectric Metasurface,Advanced Optical Materials

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A Tunable Multigate Indium‐Tin‐Oxide‐Assisted All‐Dielectric Metasurface
Advanced Optical Materials ( IF 8.0 ) Pub Date : 2018-02-09 , DOI: 10.1002/adom.201701275
Ali Forouzmand ₁ , Mohammad Mahdi Salary ₁ , Sandeep Inampudi ₁ , Hossein Mosallaei ₁

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In this paper, an optically active reflective metasurface with tunable phase performance is designed which operates based on the excitation of both electric and magnetic resonances in a silicon‐made nanoantenna element and the use of layered indium tin oxide (ITO)–alumina under the influence of external multigate biasing. The capability of achieving robust control over the reflection characteristics of two closely spaced electric and magnetic resonances is investigated. Adopting the multigate biasing enables relatively high reflection amplitude of 0.4 over the entire phase‐change coverage (≈180°) in the near‐infrared regime by exploiting the constructive interference between the geometrical resonances. The physical mechanism behind this ITO‐assisted metal–insulator–semiconductor building block can be described as the strong confinement of electromagnetic fields at the vicinity of ITO layers and the possibility of modulating the carrier concentrations of the integrated active materials by electrically varying the bias voltage. The uniformity of reflection magnitude for all reflection phase coverage, relatively high reflectivity, and electro‐optical tunability is leveraged to design three multifunctional devices with step‐by‐step increase in complexity of biasing network including ultrathin reconfigurable linear/circular polarizer (simple identical biasing), dynamical beam steering platform (two‐state biasing), and tunable metalens with controllable on‐ and off‐axes focusing pattern in real‐time (advanced element‐by‐element biasing).

中文翻译：

可调多栅极铟锡氧化物辅助全介电超表面

在本文中，设计了一种具有可调相位性能的光学有源反射超表面，其工作原理是基于硅制纳米天线元件中的电和磁共振激发，并在影响下使用层状氧化铟锡（ITO）-氧化铝外部多栅极偏置。研究了对两个紧密间隔的电和磁共振的反射特性实现鲁棒控制的能力。通过利用几何共振之间的相长干涉，采用多栅极偏置可在近红外范围内的整个相变覆盖范围内（约180°）实现0.4的相对较高的反射幅度。ITO辅助金属-绝缘体-半导体构建块背后的物理机制可以描述为在ITO层附近对电磁场的强烈限制，以及通过电改变偏置电压来调制集成活性材料的载流子浓度的可能性。利用所有反射相位范围内反射幅度的均匀性，相对较高的反射率和电光可调性，设计出三种多功能器件，偏置网络的复杂性逐步提高，其中包括超薄可重构线性/圆形偏振器（简单的相同偏置）），动态光束转向平台（两态偏置）和具有可控的轴上和轴外实时聚焦模式的可调金属（先进的逐元素偏置）。

更新日期：2018-02-09

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