Nano-Micro Letters ( IF 31.6 ) Pub Date : 2017-12-13 , DOI: 10.1007/s40820-017-0171-3 Jian Zhang 1, 2 , Siyu Liu 1 , Jean Pierre Nshimiyimana 1, 2 , Ya Deng 1, 2 , Xiao Hu 1, 2 , Xiannian Chi 1, 2 , Pei Wu 1, 2 , Jia Liu 1, 2 , Weiguo Chu 1 , Lianfeng Sun 1
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Abstract
A Van Hove singularity (VHS) is a singularity in the phonon or electronic density of states of a crystalline solid. When the Fermi energy is close to the VHS, instabilities will occur, which can give rise to new phases of matter with desirable properties. However, the position of the VHS in the band structure cannot be changed in most materials. In this work, we demonstrate that the carrier densities required to approach the VHS are reached by gating in a suspended carbon nanotube Schottky barrier transistor. Critical saddle points were observed in regions of both positive and negative gate voltage, and the conductance flattened out when the gate voltage exceeded the critical value. These novel physical phenomena were evident when the temperature is below 100 K. Further, the temperature dependence of the electrical characteristics was also investigated in this type of Schottky barrier transistor.
中文翻译：
悬浮碳纳米管肖特基势垒晶体管中范霍夫奇点和电特性温度依赖性的观察
抽象的
范霍夫奇点 (VHS) 是结晶固体的声子或电子态密度的奇点。当费米能量接近 VHS 时，就会出现不稳定性，从而产生具有所需特性的新物质相。然而，在大多数材料中，VHS 在能带结构中的位置无法改变。在这项工作中，我们证明了通过悬浮碳纳米管肖特基势垒晶体管的选通可以达到接近 VHS 所需的载流子密度。在正栅极电压和负栅极电压区域均观察到临界鞍点，并且当栅极电压超过临界值时电导变平。当温度低于 100 K 时，这些新颖的物理现象很明显。此外，还在这种类型的肖特基势垒晶体管中研究了电气特性的温度依赖性。
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