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In situ self-sacrificed template synthesis of vanadium nitride/nitrogen-doped graphene nanocomposites for electrochemical capacitors†
Nanoscale ( IF 5.8 ) Pub Date : 2018-02-09 00:00:00 , DOI: 10.1039/c7nr08985f
Hong-hui Liu 1, 2, 3, 4, 5 , Hong-ling Zhang 4, 5, 6, 7, 8 , Hong-bin Xu 4, 5, 6, 7, 8 , Tai-ping Lou 1, 2, 3, 4 , Zhi-tong Sui 1, 2, 3, 4 , Yi Zhang 1, 2, 3, 4, 5
Affiliation  

Vanadium nitride and graphene have been widely used as pseudo-capacitive and electric double-layer capacitor electrode materials for electrochemical capacitors, respectively. However, the poor cycling stability of vanadium nitride and the low capacitance of graphene impeded their practical applications. Herein, we demonstrated an in situ self-sacrificed template method for the synthesis of vanadium nitride/nitrogen-doped graphene (VN/NGr) nanocomposites by the pyrolysis of a mixture of dicyandiamide, glucose, and NH4VO3. Vanadium nitride nanoparticles of the size in the range of 2 to 7 nm were uniformly embedded into the nitrogen-doped graphene skeleton. Furthermore, the VN/NGr nanocomposites with a high specific surface area and pore volume showed a high specific capacitance of 255 F g−1 at 10 mV s−1, and an excellent cycling stability (94% capacitance retention after 2000 cycles). The excellent capacitive properties were ascribed to the excellent conductivity of nitrogen-doped graphene, high surface area, high pore volume, and the synergistic effect between vanadium nitride and nitrogen-doped graphene.

中文翻译:

用于电化学电容器的氮化钒/氮掺杂石墨烯纳米复合材料的原位自牺牲模板合成

氮化钒和石墨烯已分别广泛用作电化学电容器的伪电容和双电层电容器电极材料。但是,氮化钒的循环稳定性差和石墨烯的低电容阻碍了它们的实际应用。本文中,我们展示了一种通过双氰胺,葡萄糖和NH 4 VO 3混合物的热解法合成氮化钒/氮掺杂石墨烯(VN / NGr)纳米复合材料的原位自牺牲模板方法。。将尺寸在2至7 nm范围内的氮化钒纳米粒子均匀地嵌入到掺杂氮的石墨烯骨架中。此外,具有高比表面积和孔体积的VN / NGr纳米复合材料在10mV s -1时显示出255 F g -1的高比电容,并且具有优异的循环稳定性(2000次循环后94%的电容保持率)。优异的电容性能归因于氮掺杂石墨烯的优异导电性,高表面积,高孔体积以及氮化钒与氮掺杂石墨烯之间的协同效应。
更新日期:2018-02-09
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