Hydrogen Evolution with Minimal Parasitic Light Absorption by Dense Co–P Catalyst Films on Structured p-Si Photocathodes,ACS Energy Letters

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Hydrogen Evolution with Minimal Parasitic Light Absorption by Dense Co–P Catalyst Films on Structured p-Si Photocathodes
ACS Energy Letters ( IF 19.3 ) Pub Date : 2018-02-08 00:00:00 , DOI: 10.1021/acsenergylett.8b00034
Paul A. Kempler ₁ , Miguel A. Gonzalez ₁ , Kimberly M. Papadantonakis ₁ , Nathan S. Lewis ₁

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Planar and three-dimensionally structured p-Si devices, consisting of an electrodeposited Co–P catalyst on arrays of Si microwires or Si micropyramids, were used as photocathodes for solar-driven hydrogen evolution in 0.50 M H₂SO₄(aq) to assess the effects of electrode structuring on parasitic absorption by the catalyst. Without the use of an emitter layer, p-Si/Co–P microwire arrays produced a photocurrent density of −10 mA cm^–2 at potentials that were 130 mV more positive than those of optimized planar p-Si/Co–P devices. Champion p-Si/Co–P microwire array devices exhibited ideal regenerative cell solar-to-hydrogen efficiencies of >2.5% and were primarily limited by the photovoltage of the p-Si/Co–P junction. The vertical sidewalls of the Si microwire photoelectrodes thus minimized effects due to parasitic absorption at high loadings of catalyst for device structures with or without emitters.

中文翻译：

结构化p-Si光电阴极上密集的Co-P催化膜产生的氢具有最小的寄生光吸收

平面和三维结构的p-Si器件由电沉积的Co-P催化剂组成，该催化剂沉积在Si微丝或Si微金字塔的阵列上，用作在0.50 MH ₂ SO ₄（aq）中由太阳能驱动的氢气逸出的光阴极，以评估电极结构对催化剂寄生吸收的影响。在不使用发射极层的情况下，p-Si / Co–P微线阵列产生的光电流密度为−10 mA cm ^–2电位比优化的平面p-Si / Co-P器件高130 mV。冠军的p-Si / Co-P微线阵列器件表现出理想的再生电池太阳能到氢的效率> 2.5％，并且主要受到p-Si / Co-P结的光电压的限制。因此，对于具有或不具有发射极的器件结构，Si微线光电极的垂直侧壁在催化剂的高负载下由于寄生吸收而导致的影响最小化。

更新日期：2018-02-08

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