Abstract We present the effect of miscut angle of SiC substrates on N-polar AlN growth. The N-polar AlN layers were grown on C-face 4H-SiC substrates with a miscut towards 〈 1 ¯ 1 0 0 〉 by metal-organic vapor phase epitaxy (MOVPE). The optimal V/III ratios for high-quality AlN growth on 1 ° and 4 ° miscut substrates were found to be 20,000 and 1000, respectively. MOVPE grown N-polar AlN layer without hexagonal hillocks or step bunching was achieved using a 4H-SiC substrate with an intentional miscut of 1 ° towards 〈 1 ¯ 1 0 0 〉 . The 200-nm-thick AlN layer exhibited X-ray rocking curve full width half maximums of 203 arcsec and 389 arcsec for (0 0 2) and (1 0 2) reflections, respectively. The root mean square roughness was 0.4 nm for a 2 μ m × 2 μ m atomic force microscope scan.

中文翻译：

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N-极性 AlN 在 4H-SiC 上的 MOVPE 生长：衬底错切对层质量的影响

摘要 我们介绍了 SiC 衬底的斜切角对 N 极性 AlN 生长的影响。N 极性 AlN 层通过金属有机气相外延 (MOVPE) 生长在 C 面 4H-SiC 衬底上，向 < 1¯ 1 0 0 > 错切。发现在 1° 和 4° 错切基板上高质量 AlN 生长的最佳 V/III 比率分别为 20,000 和 1000。MOVPE 生长的 N 极性 AlN 层没有六边形小丘或阶梯聚束是使用 4H-SiC 衬底实现的，故意向 < 1 ¯ 1 0 0 > 方向错切 1°。对于 (0 0 2) 和 (1 0 2) 反射，200 nm 厚的 AlN 层的 X 射线摇摆曲线半峰全宽分别为 203 弧秒和 389 弧秒。对于 2 μ m × 2 μ m 原子力显微镜扫描，均方根粗糙度为 0.4 nm。