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Unraveling the Raman Enhancement Mechanism on 1T′‐Phase ReS2 Nanosheets
Small ( IF 13.0 ) Pub Date : 2018-02-07 , DOI: 10.1002/smll.201704079
Peng Miao 1 , Jing-Kai Qin 2 , Yunfeng Shen 1 , Huimin Su 3 , Junfeng Dai 3 , Bo Song 4 , Yunchen Du 1 , Mengtao Sun 5 , Wei Zhang 6 , Hsing-Lin Wang 3 , Cheng-Yan Xu 2 , Ping Xu 1
Affiliation  

2D transition metal dichalcogenides materials are explored as potential surface‐enhanced Raman spectroscopy substrates. Herein, a systematic study of the Raman enhancement mechanism on distorted 1T (1T′) rhenium disulfide (ReS2) nanosheets is demonstrated. Combined Raman and photoluminescence studies with the introduction of an Al2O3 dielectric layer unambiguously reveal that Raman enhancement on ReS2 materials is from a charge transfer process rather than from an energy transfer process, and Raman enhancement is inversely proportional while the photoluminescence quenching effect is proportional to the layer number (thickness) of ReS2 nanosheets. On monolayer ReS2 film, a strong resonance‐enhanced Raman scattering effect dependent on the laser excitation energy is detected, and a detection limit as low as 10−9m can be reached from the studied dye molecules such as rhodamine 6G and methylene blue. Such a high enhancement factor achieved through enhanced charge interaction between target molecule and substrate suggests that with careful consideration of the layer‐number‐dependent feature and excitation‐energy‐related resonance effect, ReS2 is a promising Raman enhancement platform for sensing applications.

中文翻译:

揭示1T′-相ReS2纳米片上的拉曼增强机理

2D过渡金属二卤化碳材料被认为是潜在的表面增强拉曼光谱衬底。本文中,系统地研究了扭曲的1T(1T')二硫化rh(ReS 2)纳米片的拉曼增强机理。拉曼和光致发光研究相结合,并引入了Al 2 O 3介电层,明确表明ReS 2材料的拉曼增强来自电荷转移过程,而非能量转移过程,而拉曼增强与光致发光猝灭效应成反比。与ReS 2纳米片的层数(厚度)成正比。在单层ReS 2上薄膜中,检测到取决于激光激发能量的强共振增强拉曼散射效应,并且从所研究的染料分子(如若丹明6G和亚甲基蓝)可以达到低至10 -9 m的检测限。通过增强靶分子与底物之间的电荷相互作用实现的如此高的增强因子表明,在仔细考虑层数依赖性特征和激发能相关的共振效应后,ReS 2是一个有前途的拉曼增强平台,可用于传感应用。
更新日期:2018-02-07
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