An all-in-one memory cell based on a homopolymer with a pyrene side chain and its volatile and nonvolatile resistive switch behaviors †,Polymer Chemistry

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An all-in-one memory cell based on a homopolymer with a pyrene side chain and its volatile and nonvolatile resistive switch behaviors †
Polymer Chemistry ( IF 4.1 ) Pub Date : 2018-02-06 00:00:00 , DOI: 10.1039/c7py01925d
Hongliang Wang _{1,

2,

3,

4,

5} , Feng Zhou _{1,

2,

3,

4,

5} , Linxin Wu _{1,

2,

3,

4,

5} , Xiong Xiao _{1,

2,

3,

4,

5} , Pei-Yang Gu _{1,

2,

3,

4,

5} , Jun Jiang _{1,

2,

3,

4,

5} , Qing-Feng Xu _{1,

2,

3,

4,

5} , Jian-Mei Lu _{1,

2,

3,

4,

5}

Affiliation

Due to their processability and flexibility, nanosheets of functional polymers showed promising applications in high capacity memory and flexional organic electronics. In this paper, we are interested in preparing a homopolymer nanofilm based ternary memory device with two different memory performances (non-volatile and volatile). Two monomers, 2-methyl-acrylic acid 4-(1-cyano-2-naphthalen-1-yl-vinyl)-phenyl ester (MNPE) and 2-methyl-acrylic acid 4-(1-cyano-2-pyren-1-yl-vinyl)-phenyl ester (MPPE), with the same structure except for the terminal conjugated group, were synthesised. Their corresponding homopolymers: PMNPE and PMPPE were obtained from monomers MNPE and MPPE by the use of the atom transfer radical polymerisation (ATRP) method, respectively. The sandwich-structure memory devices using PMNPE and PMPPE as active layers were prepared. Through the current–voltage (I–V) measurement of sandwich-structure memory devices based on PMNPE and PMPPE, memory devices based on PMNPE show binary WORM memory behaviour, while memory devices based on PMPPE exhibit a rewritable ternary memory behaviour (0, 1, 2, three conductivity states), in which the “1” and “2” states can be switched with bias switching. Their storage mechanism was speculated and discovered by experiments. The pyrene conjugated plane was much larger than that of naphthalene, so the storage mechanism for ternary behaviour involved an inversion of configuration and a charge transfer process, and the inversion of configuration was reversible and offered the rewritable behaviour. Our result provided a new ‘all-in-one’ memory cell to extend the performance of multilevel data storage devices.

中文翻译：

基于带有a侧链的均聚物的多合一存储单元，其易失性和非易失性电阻开关性能†

由于它们的可加工性和灵活性，功能聚合物纳米片在高容量存储器和柔性有机电子产品中显示出有希望的应用。在本文中，我们对制备具有两种不同存储性能（非易失性和易失性）的均聚物纳米膜基三元存储器件感兴趣。两种单体，2-甲基丙烯酸4-（1-氰基-2-萘-1-基-乙烯基）-苯酯（MNPE）和2-甲基丙烯酸4-（1-氰基-2-吡啶-合成具有除末端共轭基团以外的相同结构的1-乙烯基-乙烯基）-苯基酯（MPPE）。它们相应的均聚物：PMNPE和PMPPE是从单体MNPE和MPPE获得的分别使用原子转移自由基聚合（ATRP）方法。制备了使用PMNPE和PMPPE作为有源层的夹层结构存储器件。通过电流-电压（我- V）的基础上夹心结构的存储器器件的测量PMNPE和PMPPE，基于存储器装置PMNPE显示二进制WORM存储器的行为，而基于存储器装置PMPPE表现出可重写的三元存储行为（0、1、2、3个导电状态），其中“ 1”和“ 2”状态可通过偏置切换进行切换。通过实验推测并发现了它们的储存机理。共轭平面比萘大得多，因此三元行为的存储机制涉及构型反转和电荷转移过程，构型反转是可逆的，并提供可重写的行为。我们的结果提供了一个新的“多合一”存储单元，以扩展多级数据存储设备的性能。

更新日期：2018-02-06

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