We demonstrate the first InGaN/GaN blue light emitting diodes (LEDs) on freestanding GaN grown using a Si substrate. Transmission electron microscopy and X-ray diffraction analysis revealed that the InGaN/GaN multi quantum wells (MQWs) on freestanding GaN grown using Si substrates have excellent structural properties suitable for high-performance optical devices. Photoluminescence measurements confirm the high crystal quality of the InGaN/GaN MQWs and remarkable emission wavelength uniformity with a standard deviation of 0.68%. Light–current–voltage characteristics indicate that the InGaN/GaN LEDs on freestanding GaN grown using a Si substrate exhibit a forward voltage of 3.75 V at a current of 20 mA and rectifying characteristics with very low leakage current and high breakdown voltage. Furthermore, they provide stable blue electroluminescence (λ = 460 nm) with a small variation in the emission wavelength of 0.2% over a 2 in. area. The internal quantum efficiency of InGaN/GaN LEDs on freestanding GaN grown using Si substrates is remarkable at ∼80%. Despite using Si substrates as the support, the optoelectronic properties of the InGaN/GaN LEDs are outstanding. We believe that the InGaN/GaN LEDs based on freestanding GaN crystals extracted from Si substrates are promising for the development of GaN-based high-performance devices.

中文翻译：

---

使用从硅衬底提取的独立式GaN的InGaN / GaN蓝光发光二极管

我们演示了使用硅衬底生长的独立式GaN上的首个InGaN / GaN蓝色发光二极管（LED）。透射电子显微镜和X射线衍射分析表明，使用Si衬底生长的独立式GaN上的InGaN / GaN多量子阱（MQW）具有适用于高性能光学器件的出色结构性能。光致发光测量结果证实了InGaN / GaN MQW的高晶体质量和显着的发射波长均匀性，标准偏差为0.68％。光电流电压特性表明，使用Si衬底生长的独立式GaN上的InGaN / GaN LED在电流为20 mA时表现出3.75 V的正向电压，并且具有极低的漏电流和高击穿电压的整流特性。此外，它们提供稳定的蓝色电致发光（λ= 460 nm），并且在2英寸区域内发射波长的变化很小，为0.2％。使用Si衬底生长的独立式GaN上的InGaN / GaN LED的内部量子效率显着，约为80％。尽管使用Si衬底作为支撑物，但InGaN / GaN LED的光电性能仍然非常出色。我们认为，基于从Si基板中提取的独立式GaN晶体的InGaN / GaN LED对于基于GaN的高性能器件的开发是有前途的。