The InSb photodetector on a Si substrate acts as a signal receiver for the mid-infrared silicon photonics application to overcome the limitation of group IV semiconductors. In this paper, we demonstrated an InSb p–i–n photodetector with an InAlSb barrier layer grown on (100) silicon substrates via a GaAs/Ge buffer by molecular beam epitaxy. The lattice mismatch between InSb and GaAs was accommodated by an interfacial misfit array. The 50% cutoff detectable wavelength of this detector increased from 5.7 μm at 80 K to 6.3 μm at 200 K. An 80 K detectivity of 8.8 × 10⁹ cmHz^1/2 W^–1 at 5.3 μm was achieved with a quantum efficiency of 16.3%. The dark current generating mechanism of this detector is both generation–recombination and surface leakage above 140 K, while it is only surface leakage from 120 to 40 K.

中文翻译：

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InSb光电探测器在硅上的单片集成，用于中红外硅光子学

Si衬底上的InSb光电探测器用作中红外硅光子学应用的信号接收器，以克服IV组半导体的局限性。在本文中，我们展示了一个InSb p–i–n光电探测器，该InSb p–i–n光电探测器具有通过分子束外延通过GaAs / Ge缓冲剂在（100）硅衬底上生长的InAlSb势垒层。InSb和GaAs之间的晶格失配由界面失配阵列解决。该检测器的50％截止可检测波长从80 K的5.7μm增加到200 K的6.3μm。80K的探测率为8.8×10 ⁹ cmHz ^1/2 W ^–1达到5.3μm时的量子效率为16.3％。该检测器的暗电流产生机制既是产生复合又是140 K以上的表面泄漏，而仅仅是120至40 K的表面泄漏。