Balancing silicon/aluminum oxide junctions for super-plasmonic emission enhancement of quantum dots via plasmonic metafilms,Nanoscale

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Balancing silicon/aluminum oxide junctions for super-plasmonic emission enhancement of quantum dots via plasmonic metafilms
Nanoscale ( IF 5.8 ) Pub Date : 2018-02-01 00:00:00 , DOI: 10.1039/c7nr09396a
Seyed M. Sadeghi _{1,

2,

3,

4} , Waylin J. Wing _{1,

2,

3,

4} , Rithvik R. Gutha _{1,

2,

3,

4} , Jamie S. Wilt _{1,

4,

5,

6} , Judy Z. Wu _{1,

4,

5,

6}

Affiliation

We study the impact of structural features of Si/Al oxide junctions on metal–oxide plasmonic metafilms formed via placing such junctions in close vicinity of an Au/Si Schottky barrier. The emission intensity and dynamics of colloidal semiconductor quantum dots deposited on such metafilms are investigated, while the surface morphology and structural compositions of the Si/Al oxide junction are controlled. The results show the conditions wherein the Si/Al oxide junction can reshape the impact of plasmonic effects, allowing it to increase the lifetimes of excitons. Under these conditions, the plasmonic metafilms can quarantine excitons against the fluctuating trap environments of the quantum dots, offering super-plasmonic emission enhancement that includes enhancement of the spontaneous emission decay rate combined with the suppression of Auger decay.

中文翻译：

平衡硅/铝氧化物结，通过等离子超膜增强量子点的超等离子发射

我们研究了Si / Al氧化物结的结构特征对通过形成的金属-氧化物等离子超膜的影响将此类结放置在Au / Si肖特基势垒附近。研究了沉积在这种超薄膜上的胶体半导体量子点的发射强度和动力学，同时控制了Si / Al氧化物结的表面形态和结构组成。结果表明，Si / Al氧化物结可以重塑等离子体效应的影响，从而延长了激子的寿命。在这些条件下，等离子体激元膜可以隔离激子，以抵抗量子点的波动陷阱环境，从而提供超等离子体激元发射增强功能，包括增强自发发射衰减率并抑制俄歇衰减。

更新日期：2018-02-01

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