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Analog Circuit Applications Based on Ambipolar Graphene/MoTe2 Vertical Transistors
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2018-02-01 , DOI: 10.1002/aelm.201700662 Chen Pan 1 , Yajun Fu 1, 2 , Jiaxin Wang 3 , Junwen Zeng 1 , Guangxu Su 1 , Mingsheng Long 1 , Erfu Liu 1 , Chenyu Wang 1 , Anyuan Gao 1 , Miao Wang 1 , Yu Wang 1 , Zhenlin Wang 1 , Shi-Jun Liang 1 , Ru Huang 3 , Feng Miao 1
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2018-02-01 , DOI: 10.1002/aelm.201700662 Chen Pan 1 , Yajun Fu 1, 2 , Jiaxin Wang 3 , Junwen Zeng 1 , Guangxu Su 1 , Mingsheng Long 1 , Erfu Liu 1 , Chenyu Wang 1 , Anyuan Gao 1 , Miao Wang 1 , Yu Wang 1 , Zhenlin Wang 1 , Shi-Jun Liang 1 , Ru Huang 3 , Feng Miao 1
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The current integrated circuit technology based on conventional metal–oxide–semiconductor field‐effect transistor (MOSFET) is approaching the limit of miniaturization with increasing demand on energy. Several analog circuit applications based on graphene FETs have been demonstrated with less components comparing to the conventional technology. However, low on/off current ratio caused by the semimetal nature of graphene has severely hindered its practical applications. Here, a graphene/molybdenum ditelluride (MoTe2) van der Waals (vdW) vertical transistor with V‐shaped ambipolar field‐effect transfer characteristics to overcome this challenge is reported. Investigations on temperature dependence of transport properties reveal that gate‐tunable asymmetric barriers of the devices are account for the ambipolar behaviors. Furthermore, to demonstrate the analog circuit applications of such vdW vertical transistors, output polarity controllable amplifier and frequency doubler are successfully realized. These results enable vdW heterojunction‐based electronic devices to open up new possibilities for wide perspective in telecommunication field.
中文翻译：
基于双极性石墨烯/ MoTe2垂直晶体管的模拟电路应用
当前，基于常规金属氧化物半导体场效应晶体管（MOSFET）的集成电路技术正接近微型化的极限，同时对能源的需求也不断增加。与常规技术相比，已经证明了基于石墨烯FET的几种模拟电路应用具有更少的组件。然而，由石墨烯的半金属性质引起的低通/断电流比严重阻碍了其实际应用。在这里，石墨烯/二碲化钼（MoTe 2）范德华（vdW）垂直晶体管具有V形双极性场效应传输特性，可以克服这一挑战。对传输特性的温度依赖性的研究表明，器件的门可调非对称势垒是双极性行为的原因。此外，为了演示这种vdW垂直晶体管的模拟电路应用，成功实现了输出极性可控放大器和倍频器。这些结果使基于vdW异质结的电子设备为电信领域的广阔前景开辟了新的可能性。
更新日期：2018-02-01
中文翻译：
基于双极性石墨烯/ MoTe2垂直晶体管的模拟电路应用
当前，基于常规金属氧化物半导体场效应晶体管（MOSFET）的集成电路技术正接近微型化的极限，同时对能源的需求也不断增加。与常规技术相比，已经证明了基于石墨烯FET的几种模拟电路应用具有更少的组件。然而，由石墨烯的半金属性质引起的低通/断电流比严重阻碍了其实际应用。在这里，石墨烯/二碲化钼（MoTe 2）范德华（vdW）垂直晶体管具有V形双极性场效应传输特性，可以克服这一挑战。对传输特性的温度依赖性的研究表明，器件的门可调非对称势垒是双极性行为的原因。此外，为了演示这种vdW垂直晶体管的模拟电路应用，成功实现了输出极性可控放大器和倍频器。这些结果使基于vdW异质结的电子设备为电信领域的广阔前景开辟了新的可能性。
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