PbSe Nanorod Field‐Effect Transistors: Room‐ and Low‐Temperature Performance,Advanced Electronic Materials

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PbSe Nanorod Field‐Effect Transistors: Room‐ and Low‐Temperature Performance
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2018-02-01 , DOI: 10.1002/aelm.201700580
Lu Han _{1,

2} , Daniel M. Balazs ₁ , Artem G. Shulga ₁ , Mustapha Abdu-Aguye ₁ , Wanli Ma ₂ , Maria Antonietta Loi ₁

Affiliation

Lead chalcogenides with large exciton Bohr radius display strong quantum confinement, which make them applicable in a wide range of optoelectronic devices such as solar cells and photodetectors. Especially, 1D PbSe nanocrystals attract much attention with their potential for multiple exciton generation. However, very little is known on their charge transport properties. In this study well performing field‐effect transistors based on PbSe nanorods with an inorganic iodide‐based ligand are presented for the first time. The transistors at room temperature display ambipolar characteristics with electron mobility of ≈0.1 cm² V⁻¹ s⁻¹ and hole mobility of 1.1 × 10⁻⁴ cm² V⁻¹ s⁻¹ in the ultraclean environment. Low temperature investigation reveals a transition around 200 K between nearest‐neighbor and variable‐range hopping mechanism. Below 200 K, the transport properties are dominated by the severe disorder.

中文翻译：

PbSe纳米棒场效应晶体管：室温和低温性能

激子玻尔半径大的硫族化物铅表现出较强的量子约束，使其可用于各种光电器件，例如太阳能电池和光电探测器。特别是，一维PbSe纳米晶体具有产生多种激子的潜力，因此备受关注。但是，对其电荷传输性能知之甚少。在本研究中，首次展示了基于PbSe纳米棒和基于无机碘化物的配体的性能良好的场效应晶体管。室温下的晶体管具有双极性特性，电子迁移率约为0.1 cm ² V ^-1 s ^-1，空穴迁移率约为1.1×10 ^-4 cm ² V ^-1 s。^-1在超净环境中。低温调查显示，最近邻居和变程跳变机制之间的过渡约为200K。低于200 K时，运输性能受严重紊乱的支配。

更新日期：2018-02-01

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