Nanosculpting of Atomically Thin 2D Materials for Site‐Specific Photoluminescence Modulation,Advanced Optical Materials

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Nanosculpting of Atomically Thin 2D Materials for Site‐Specific Photoluminescence Modulation
Advanced Optical Materials ( IF 8.0 ) Pub Date : 2018-02-01 , DOI: 10.1002/adom.201701284
Pawan Kumar ₁ , Viswanath Balakrishnan ₁

Affiliation

Nanomanufacturing techniques to generate patterned structures of mechanically exfoliated two‐dimensional (2D) materials by lithography, gas phase etching, and electron beam/ion beam irradiation have gained significant interest. Such control over patterning in monolayers of WS₂ and MoS₂ will aid the development of novel, miniaturized devices for nanoelectronic and nanophotonic applications. In this study a controlled site‐specific nanosculpting of WS₂ and MoS₂ monolayers grown on SiO₂/Si substrate by atmospheric pressure chemical vapor deposition (CVD) is reported. Nanoindentation by sharp diamond Berkovich tip with ≈50 nm radius is used to make periodic arrays of indents to spatially modulate photoluminescence (PL) intensity up to more than an order of changes. To demonstrate systematic strain variation, relatively shallow indentations are also carried out with conical tip of ≈5 µm radius. Raman and PL measurements carried out near the indented region indicate a systematic variation in strain with respect to load and location. Further, nanosculpting to design nonperiodic structures is achieved by performing nanoindentation in close proximity to each other with detailed Raman and PL mapping. The developed approach of indentation‐based site‐specific nanosculpting of 2D materials and modulation of PL intensity provides direct pathways to design a variety of patterned structures and nanoscale devices for photodetector applications.

中文翻译：

原子级二维薄材料的纳米雕刻，用于特定位置的光致发光调制

通过光刻，气相蚀刻和电子束/离子束辐照产生机械剥离的二维（2D）材料的图案化结构的纳米制造技术引起了人们的极大兴趣。对WS ₂和MoS ₂单层中的图案的这种控制将有助于开发用于纳米电子和纳米光子应用的新颖的小型化设备。在这项研究中，对在SiO _2上生长的WS ₂和MoS ₂单层进行了特定于位置的纳米雕刻报道了通过大气压化学气相沉积（CVD）的/ Si衬底。锐利的菱形Berkovich尖端的纳米压痕（半径约为50 nm）被用来制作凹痕的周期性阵列，以空间方式调节光致发光（PL）强度，直至发生变化的数量级以上。为了证明系统的应变变化，还用约5 µm半径的圆锥形尖端进行了相对较浅的压痕。在凹进区域附近进行的拉曼和PL测量表明，应变相对于载荷和位置的系统变化。此外，通过使用详细的拉曼和PL映射彼此紧靠地进行纳米压痕，可以实现设计非周期性结构的纳米雕刻。

更新日期：2018-02-01

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