Laser ablation ICP-MS for detection of substrate contamination from plated metal contacts in silicon solar cells,Journal of Analytical Atomic Spectrometry

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Laser ablation ICP-MS for detection of substrate contamination from plated metal contacts in silicon solar cells
Journal of Analytical Atomic Spectrometry ( IF 3.1 ) Pub Date : 2018-02-01 00:00:00 , DOI: 10.1039/c7ja00358g
J. Colwell _{1,

2,

3,

4} , P. Hsiao _{1,

2,

3,

4} , W. Zhang _{1,

2,

3,

4} , X. Wang _{1,

2,

3,

4} , R. Akter _{2,

3,

4,

5} , A. Lennon _{1,

2,

3,

4}

Affiliation

The use of laser ablation inductively-coupled plasma mass spectrometry (LA-ICP-MS) is introduced for the analysis of substrate contamination from plated metal contacts on silicon solar cells. Solar cells with plated Ni/Cu/Ag contacts were heat treated at 200 °C for up to 1000 hours and the concentration of plated metals in the silicon wafer was determined with LA-ICP-MS. Ablation efficiency was shown to depend strongly on spot size and scan speed, which greatly affected crater properties and transport efficiency. Wet chemical etching using HNO₃ + HF/HCl was demonstrated to sufficiently remove surface metals from plated regions for the purposes of metal contamination analysis of solar cells. The LA-ICP-MS technique was successful in demonstrating the penetration of plated metal from the contacts into the silicon wafer during thermal stress testing, and correlating Cu and Ni concentration with an associated exponential reduction in the open-circuit voltage of silicon solar cells, although the individual contributions of each metal were difficult to separate. The large standard deviations (>±50%) in LA-ICP-MS results were theorised to be the result of non-uniformities in the cell processing as well as in the line-scanning method applied in LA-ICP-MS measurements, the latter being able to be addressed by optimisation of laser ablation parameters for silicon solar cells.

中文翻译：

激光烧蚀ICP-MS用于检测来自硅太阳能电池中电镀金属触点的基材污染

引入了激光烧蚀电感耦合等离子体质谱（LA-ICP-MS）的使用，以分析来自硅太阳能电池上电镀金属触点的基板污染。将具有镀Ni / Cu / Ag触点的太阳能电池在200°C下热处理长达1000小时，并使用LA-ICP-MS测定硅晶片中镀金属的浓度。结果表明，烧蚀效率很大程度上取决于光斑尺寸和扫描速度，这极大地影响了陨石坑的性质和传输效率。使用HNO _3进行湿法化学蚀刻为了进行太阳能电池的金属污染分析，已证明+ HF / HCl可以从电镀区域充分去除表面金属。LA-ICP-MS技术成功地证明了在热应力测试过程中电镀金属从触点渗透到硅晶片中，并将铜和镍的浓度与硅太阳能电池的开路电压的相关指数降低相关，尽管每种金属的单独贡献很难分开。LA-ICP-MS结果中的大标准偏差（>±50％）被认为是细胞处理以及LA-ICP-MS测量中使用的线扫描方法中不均匀的结果。后者可以通过优化硅太阳能电池的激光烧蚀参数来解决。

更新日期：2018-02-01

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