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Preparation of novel graphene-PEDOT:PSS nanocomposite films and fabrication of heterojunction diodes with n-Si
Chemical Physics Letters ( IF 2.8 ) Pub Date : 2018-01-31 , DOI: 10.1016/j.cplett.2018.01.049
C.S. Pathak , J.P. Singh , R. Singh

In this paper, we report about the preparation of novel nanocomposite films based on graphene and Poly (3,4 ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS). It has been observed that the prepared nanocomposite material shows excellent electrical conductivity of 60 S/cm and highly transparent (>90%) in the visible region. The resistivity of graphene and PEDOT:PSS nanocomposite films decreases as temperature increases, which is a characteristic behavior of semiconductors. The conductivity of nanocomposite film is enhanced by two orders of magnitude as compared to pristine PEDOT:PSS film. Au/graphene-PEDOT:PSS nanocomposite/n-Si/In-Ga diodes are fabricated and it exhibited rectifying behavior.



中文翻译:

新型石墨烯-PEDOT:PSS纳米复合膜的制备及n -Si异质结二极管的制备

在本文中,我们报道了有关基于石墨烯和聚(3,4-乙撑二氧噻吩)-聚(苯乙烯磺酸盐)(PEDOT:PSS)的新型纳米复合薄膜的制备方法。已经观察到,所制备的纳米复合材料显示出60 S / cm的优异电导率并且在可见光区域中具有高度透明(> 90%)。石墨烯和PEDOT:PSS纳米复合膜的电阻率随温度的升高而降低,这是半导体的特征行为。与原始的PEDOT:PSS膜相比,纳米复合膜的电导率提高了两个数量级。制备了Au /石墨烯-PEDOT:PSS纳米复合材料/ n -Si / In-Ga二极管,并表现出整流性能。

更新日期:2018-02-01
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