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High Performance Multiwall Carbon Nanotube–Insulator–Metal Tunnel Diode Arrays for Optical Rectification
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2018-01-26 , DOI: 10.1002/aelm.201700446
Erik C. Anderson 1 , Thomas L. Bougher 1 , Baratunde A. Cola 1
Affiliation  

This work reports important fundamental advancements in multiwall carbon nanotube (MWCNT) rectenna devices by creating and optimizing new diode structures to allow optical rectification with air‐stable devices. The incorporation of double‐insulator layer tunnel diodes, fabricated for the first time on MWCNT arrays, enables the use of air‐stable top metals (Al and Ag) with excellent asymmetry for rectification applications. Asymmetry is increased by as much as 10 times, demonstrating the effectiveness of incorporating multiple dielectric layers to control electron tunneling in MWCNT diode structures. MWCNT tip opening also reduces device resistance up to 75% due to an increase in diode contact area to MWCNT inner walls. This effect is consistent for different oxide materials and thicknesses. A number of insulator layers, including Al2O3, HfO2, TiO2, ZnO, and ZrO2, in both single‐ and then double‐insulator configurations are tested. Resistance increases exponentially with insulator thickness and decreases with electron affinity. These results are used to characterize double‐insulator diode performance. Finally, for the most asymmetric device structure, Al2O3‐HfO2 (4/4 nm), optical rectification at a frequency of 470 THz (638 nm) is demonstrated. These results open the door for designing efficient MWCNT rectenna devices with more material flexibility, including air‐stable, transparent, and conductive top electrode materials.

中文翻译:

用于光学整流的高性能多壁碳纳米管-绝缘体-金属隧道二极管阵列

这项工作报告了多壁碳纳米管(MWCNT)整流天线设备的重要基础性进展,方法是创建并优化新的二极管结构,以实现空气稳定设备的光整流。首次在MWCNT阵列上制造的双绝缘层隧道二极管的结合,使得在整流应用中能够使用具有出色非对称性的空气稳定的顶层金属(Al和Ag)。不对称性增加了多达10倍,这表明在MWCNT二极管结构中合并多个介电层以控制电子隧穿的有效性。由于二极管与MWCNT内壁的接触面积增加,MWCNT尖端的开口也使器件电阻降低了75%。对于不同的氧化物材料和厚度,这种效果是一致的。多个绝缘层,包括铝分别测试了单绝缘子和双绝缘子配置中的2 O 3,HfO 2,TiO 2,ZnO和ZrO 2。电阻随着绝缘体的厚度呈指数增长,而随着电子亲和性下降。这些结果用于表征双绝缘二极管的性能。最后,对于最不对称的器件结构Al 2 O 3 -HfO 2(4/4 nm),展示了在470 THz(638 nm)频率下的光整流。这些结果为设计具有更高材料灵活性的高效MWCNT整流天线设备打开了大门,其中包括空气稳定,透明和导电的顶部电极材料。
更新日期:2018-01-26
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