Voltage‐dependent photocurrent in irradiated GaAs solar cells,Progress in Photovoltaics

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Voltage‐dependent photocurrent in irradiated GaAs solar cells
Progress in Photovoltaics ( IF 8.0 ) Pub Date : 2018-01-23 , DOI: 10.1002/pip.2983
Manuel Salzberger _{1,

2} , Martin Rutzinger _{1,

2} , Christel Nömayr ₁ , Paolo Lugli ₃ , Claus G. Zimmermann ₁

Affiliation

GaAs single junction cells, representative of the middle cell in triple junction Ga _0.5In _0.5P/GaAs/Ge cells, were irradiated with various fluences of 1‐ and 3‐MeV electrons as well as 1‐MeV protons. The light I‐V curves measured at room temperature exhibit a voltage‐dependent photocurrent. The photocurrent is modeled taking into account the voltage‐dependent width of the space charge region in combination with a strongly decreased minority carrier diffusion length. By extracting the width of the space charge region from capacitance measurements and the base layer diffusion length from the external quantum efficiency of the cell, the experimental behavior is reproduced accurately.

中文翻译：

GaAs太阳能电池中依赖电压的光电流

用1到3 MeV电子和1到MeV质子的各种通量辐照GaAs单结电池，该电池代表三结Ga _0.5 In / _0.5 P / GaAs / Ge细胞中的中间电池。在室温下测得的光I-V曲线显示出取决于电压的光电流。对光电流进行建模时，要考虑到空间电荷区域的电压相关宽度以及极少的少数载流子扩散长度。通过从电容测量值中提取空间电荷区域的宽度以及从电池的外部量子效率中提取基层扩散长度，可以准确地再现实验行为。

更新日期：2018-01-23

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