Abstract Indium oxide (InO x ) thin films were synthesized by mist chemical vapor deposition (mist-CVD), using oxygen (O 2 ) and nitrogen (N 2 ) carrier gases. Relatively high growth rates are achieved with oxygen, resulting in high refractive index InO x layers. In addition, super charge transport properties are observed in InO x films grown with oxygen, as compared with those grown using nitrogen carrier gas. Also, highly-crystalline InO x layers are formed when oxygen gas is used, with nearly perfect stoichiometry and considerably low carbon content. It is speculated that the oxygen carrier stimulates the decomposition and chemical reaction of indium precursors to form indium-oxygen bonds readily, thus reducing the amount of carbon contamination and defects related to oxygen vacant sites.

中文翻译：

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载气对雾-CVD生长氧化铟层物理和电学性能的影响

摘要 氧化铟 (InO x ) 薄膜是通过雾化化学气相沉积 (mist-CVD) 合成的，使用氧气 (O 2 ) 和氮气 (N 2 ) 载气。使用氧气可实现相对较高的生长速率，从而形成高折射率的 InO x 层。此外，与使用氮气载气生长的薄膜相比，在氧气生长的 InO x 薄膜中观察到了超电荷传输特性。此外，当使用氧气时，会形成高度结晶的 InO x 层，具有近乎完美的化学计量和相当低的碳含量。据推测，氧载体刺激了铟前驱体的分解和化学反应，容易形成铟-氧键，从而减少了与氧空位相关的碳污染和缺陷的数量。