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Improving high‐power properties of PZT ceramics by external DC bias field
Journal of the American Ceramic Society ( IF 3.5 ) Pub Date : 2018-02-08 , DOI: 10.1111/jace.15437
Anushka Bansal 1 , Husain N. Shekhani 2 , Maryam Majzoubi 1 , Eberhard Hennig 3 , Timo Scholehwar 3 , Kenji Uchino 1
Affiliation  

This paper concludes that the deterioration of the mechanical quality factor Qm when operated under high power, can be recovered by externally applying positive DC bias field. Material constants for piezoelectric ceramics are generally characterized under low‐power conditions. However, high‐power properties deviate significantly from the ones measured under low‐power conditions (Qm degrades by a factor of ~2). DC Bias field helps to recover the properties of the ceramic under high‐power conditions. The DC bias field of 200 V/mm exhibits an almost equivalent “opposite” change rate to the vibration velocity of 0.1 m/s. It is also notable that the piezoelectric loss tan θ’ can be decreased most effectively under positive DC bias field (1.9% per 100 V/mm for the hard PZT and 3.1% per 100 V/mm for the soft PZT), in comparison with the elastic or dielectric losses. This report presents a comprehensive analysis on the low‐ and high‐power piezoelectric properties of hard and soft Lead Zirconate Titanates (PZT's) under externally applied DC bias field in the k31 resonance mode (transverse extensional).

中文翻译:

通过外部直流偏置电场改善PZT陶瓷的高功率性能

本文得出的结论是,通过在外部施加正DC偏置磁场,可以恢复在大功率下工作时机械品质因数Q m的下降。压电陶瓷的材料常数通常在低功率条件下表征。但是,高功率特性与在低功率条件下(Q m降低约2倍)。直流偏置场有助于在高功率条件下恢复陶瓷的性能。200 V / mm的直流偏置场表现出与0.1 m / s的振动速度几乎相等的“相反”变化率。还值得注意的是,与正DC偏置电场相比,压电损耗tanθ'可以最有效地降低(硬PZT每100 V / mm为1.9%,软PZT每100 V / mm为3.1%)。弹性或介电损耗。本报告对在k 31共振模式(横向扩展)下外部施加的DC偏置场下硬和软锆钛酸铅(PZT)的低功率和高功率压电性能进行了全面分析。
更新日期:2018-02-08
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