Coupling of magnetic, ferroelectric, or piezoelectric properties with charge transport at oxide interfaces provides the option to revolutionize classical electronics. Here, the modulation of electrostatic potential barriers at tailored ZnO bicrystal interfaces by stress‐induced piezoelectric polarization is reported. Specimen design by epitaxial solid‐state transformation allows for both optimal polarization vector alignment and tailoring of defect states at a semiconductor–semiconductor interface. Both quantities are probed by transmission electron microscopy. Consequently, uniaxial compressive stress affords a complete reduction of the potential barrier height at interfaces with head‐to‐head orientation of the piezoelectric polarization vectors and an increase in potential barrier height at interfaces with tail‐to‐tail orientation. The magnitude of this coupling between mechanical input and electrical transport opens pathways to the design of multifunctional electronic devices like strain triggered transistors, diodes, and stress sensors with feasible applications for human–computer interfacing.

中文翻译：

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ZnO双晶中势垒的压电调谐

磁性，铁电或压电特性与氧化物界面上的电荷传输的耦合为革新传统电子学提供了选择。在这里，报道了应力诱导的压电极化在定制的ZnO双晶界面上对静电势垒的调制。通过外延固态转换进行样品设计，既可以实现最佳的偏振矢量对准，也可以在半导体-半导体界面处定制缺陷状态。通过透射电子显微镜探测这两个量。因此，单轴压应力使压电极化矢量的头对头方向的界面势垒高度降低，而尾巴方向的界面势垒高度升高。