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Superfast Room‐Temperature Activation of SnO2 Thin Films via Atmospheric Plasma Oxidation and their Application in Planar Perovskite Photovoltaics
Advanced Materials ( IF 27.4 ) Pub Date : 2018-01-19 , DOI: 10.1002/adma.201704825
Haejun Yu 1 , Hye-In Yeom 2 , Jong Woo Lee 3 , Kisu Lee 1 , Doyk Hwang 3 , Juyoung Yun 1 , Jaehoon Ryu 1 , Jungsup Lee 1 , Sohyeon Bae 3 , Seong Keun Kim 3 , Jyongsik Jang 1
Affiliation  

The power conversion efficiency (PCE) of perovskite solar cells (PSCs) has now exceeded 20%; thus, research focus has shifted to establishing the foundations for commercialization. One of the pivotal themes is to curtail the overall fabrication time, to reduce unit cost, and mass‐produce PSCs. Additionally, energy dissipation during the thermal annealing (TA) stage must be minimized by realizing a genuine low‐temperature (LT) process. Here, tin oxide (SnO2) thin films (TFs) are formulated at extremely high speed, within 5 min, under an almost room‐temperature environment (<50 °C), using atmospheric Ar/O2 plasma energy (P‐SnO2) and are applied as an electron transport layer of a “n–i–p”‐type planar PSC. Compared with a thermally annealed SnO2 TF (T‐SnO2), the P‐SnO2 TF yields a more even surface but also outstanding electrical conductivity with higher electron mobility and a lower number of charge trap sites, consequently achieving a superior PCE of 19.56% in P‐SnO2‐based PSCs. These findings motivate the use of a plasma strategy to fabricate various metal oxide TFs using the sol–gel route.

中文翻译:

大气等离子体氧化超快室温激活SnO2薄膜及其在平面钙钛矿光伏中的应用

钙钛矿太阳能电池(PSC)的功率转换效率(PCE)现在已超过20%;因此,研究重点已转移到为商业化奠定基础。关键主题之一是减少整体制造时间,降低单位成本并批量生产PSC。此外,必须通过实现真正的低温(LT)工艺来最小化热退火(TA)阶段的能量耗散。在这里,利用大气中的Ar / O 2等离子体能量(P-SnO ),在几乎室温(<50°C)的情况下,在5分钟内以极高的速度配制了氧化锡(SnO 2)薄膜(TFs)。2)并用作“ n–i–p”型平面PSC的电子传输层。与热退火的SnO 2相比TF(T-SnO 2),P-SnO 2 TF产生的表面更均匀,但导电性更高,具有更高的电子迁移率和更少的电荷陷阱位点,因此在P-SnO 2中实现了19.56%的出色PCE基于PSC。这些发现促使人们采用等离子体策略通过溶胶-凝胶法制造各种金属氧化物TF。
更新日期:2018-01-19
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