Sb₂(Se_xS_1 − x)₃ alloy materials with tunable bandgaps combining the advantages of Sb₂S₃ and Sb₂Se₃ showed high potential in low cost, non‐toxicity, and high stability solar cells. The composition dependence of device performance becomes indispensable to study. However, traditional approaches often implement 1 composition at a time, which easily lead to long period and systematic errors. The present work developed a high‐throughput experimental method, close‐space dual‐plane‐source evaporation (CDE) method, to successfully deposit continuous composition spread Sb₂(Se_xS_1 − x)₃ library at 1 time. On the surface of the obtained film, the x value of Se content evolved from 0.09 to 0.84 by a series of complementary characterizations. At depth direction, the alloy film kept high crystallinity and composition consistency. Solar cell arrays (19 × 6) were fabricated to investigate the relationship between compositions and performances. As the increase of Se content, the conversion efficiency first increased from 1.8% to 5.6% and then decreased to 5%. The V_oc and J_sc demonstrated an opposite evolution trend. The champion device with the composition of Sb₂(Se_0.68S_0.32)₃ achieved the V_oc and J_sc trade‐off exceeding the performances of Sb₂S₃ (2.43%) and Sb₂Se₃ (4.97%) devices. Cryogenic and transient characterizations were utilized to investigate the distinct performance evolution mechanism. There existed shallow defect levels in Se‐rich alloys and deep defects in sulfur‐rich ones. The widely tuned absorber compositions combined with distinct defect characters induced to the large variation of device performance. The present continuous composition spread Sb₂(Se_xS_1 − x)₃ film and their CDE fabrication technique were expected to efficiently screen materials and promote the development of antimony chalcogenide solar cells.

中文翻译：

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高通量方法沉积用于光伏应用的连续成分扩散Sb2（SexS1-x）3薄膜

具有可调节带隙的Sb ₂（Se _x S _1-x）₃合金材料结合了Sb ₂ S ₃和Sb ₂ Se ₃的优点，显示出低成本，无毒和高稳定性太阳能电池的巨大潜力。器件性能的成分依赖性变得不可或缺。但是，传统方法通常一次执行一次合成，这很容易导致较长的时间和系统的错误。本工作开发了一种高通量实验方法，即近空间双平面源蒸发（CDE）方法，以成功沉积连续的成分扩散Sb ₂（Se _x S_1-x）₃库一次。在获得的膜的表面上，Se含量的x值通过一系列互补的特征从0.09演变为0.84。在深度方向上，合金膜保持高结晶度和组成一致性。制造太阳能电池阵列（19×6）以研究组成与性能之间的关系。随着硒含量的增加，转化效率首先从1.8％增加到5.6％，然后降低到5％。V _oc和J _sc表现出相反的演变趋势。具有Sb ₂（Se _0.68 S _0.32）₃组成的冠军装置获得了V_oc和J _sc的权衡超过了Sb ₂ S ₃（2.43％）和Sb ₂ Se ₃（4.97％）器件的性能。利用低温和瞬态特性来研究独特的性能演变机理。富硒合金中存在浅缺陷水平，而富硫合金中存在深缺陷。广泛调谐的吸收剂成分与明显的缺陷特征相结合，导致器件性能发生较大变化。本连续组成分布Sb ₂（Se _x S _1-x）₃ 薄膜及其CDE制造技术有望有效地筛选材料并促进锑硫族化物太阳能电池的发展。