SolarWorld has developed a new entrant in the field of crystal growth for silicon photovoltaic substrates. The NeoGrowth technique is a contactless bulk crystal growth method for producing single crystal ingots. NeoGrowth material can be produced at a throughput on par with G5 multicrystalline silicon, but with p‐type as‐grown minority carrier lifetimes exceeding 600 microseconds for a 1.5‐ohm cm resistivity. The silicon has low oxygen, and light‐induced degradation is measured at 0.5% to 0.7% in passivated emitter rear contact–based modules. In the first report of results from this technique, p‐type resistivity can be managed within a range of 1.5 to 2.0 ohm cm over the entire ingot. Dislocation density is shown to be typically in the 10⁴ to 10⁵/cm² range but can be managed down to even lower levels. After cell processing steps, minority carrier lifetime can exceed 1.5 milliseconds for p‐type material and cell efficiencies on industrial cells range up to 20.9%.

中文翻译：

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NeoGrowth硅：一种用于光伏基板的新型高纯度，低氧晶体生长技术

SolarWorld在硅光伏基板的晶体生长领域开发了一种新产品。NeoGrowth技术是用于生产单晶锭的非接触块状晶体生长方法。NeoGrowth材料的生产能力可与G5多晶硅相媲美，但对于1.5欧姆·厘米的电阻率，p型生长的少数载流子寿命超过600微秒。硅的氧含量低，在钝化的发射极后接触模块中，光致降解的范围为0.5％至0.7％。在此技术结果的第一份报告中，可以在整个晶锭上将p型电阻率控制在1.5到2.0 ohm cm的范围内。显示位错密度通常为10 ⁴至10 ⁵ / cm ²范围，但可以降低到更低的水平。经过电池处理步骤后，p型材料的少数载流子寿命可以超过1.5毫秒，而工业电池的电池效率可达20.9％。