Abstract We have investigated the structural, magnetic and electrical transport properties of the Ni doped FeRh films prepared by magnetron co-sputtering. A large magetoresistance of 35%, induced by a reversible antiferromagnetic to ferromagnetic phase transition, is obtained at room temperature with only 1 mol.% Ni addition. Magnetic field is revealed to have an equivalent effect as temperature to drive the magnetic phase transition. Moreover, the way to realize a nonvolatile room temperature magetoresistance effect is also discussed. These results give FeRh the possibility of technological application in the spintronic field at room temperature, which are referential to other material systems with a first-order magnetic phase transition.

中文翻译：

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Ni掺杂FeRh薄膜的磁相变和大室温磁阻

摘要 我们研究了磁控共溅射制备的 Ni 掺杂 FeRh 薄膜的结构、磁和电传输特性。在室温下仅添加 1 mol.% Ni 即可获得 35% 的大磁阻，这是由可逆的反铁磁到铁磁相变引起的。磁场被证明具有与温度相同的作用来驱动磁相变。此外，还讨论了实现非挥发性室温磁阻效应的方法。这些结果为 FeRh 在室温下的自旋电子领域提供了技术应用的可能性，这对其他具有一阶磁相变的材料系统具有参考意义。