Abstract Cu2(Sn,Si)S3 is a potential material for obtaining cost effective and non-toxic absorber in thin films solar cell devices. Furthermore tunable bandgap can be achieved in the whole optimal range 1.1 eV–1.5 eV depending on the Si/(Sn + Si) ratio. We report on the synthesis of thin Cu2(Sn,Si)S3 films by a cosputtering-annealing route starting from Cu-Sn-Si precursors. The films consisted of densely packed grains. Combination of X-ray diffraction and Raman spectroscopy confirmed the formation of a Cu2Sn0.7Si0.3S3 solid solution with a monoclinic structure. The presence of Cu2SnS3 was also evidenced near the substrate and could be due to the formation kinetic of Cu2SnS3 and Cu2(Sn,Si)S3. Optical and electrical measurements showed that the substitution of 30% Sn by Si leads to a band gap increasing from 0.9 eV to 1.2 eV while maintaining the p-type conductivity. Based on these results, It can be concluded that the Cu2(Sn,Si)S3 compound is a promising absorber to be used in thin film solar cell applications.

中文翻译：

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用于薄膜太阳能电池应用的由溅射前驱体制成的 Cu 2 Sn 0.7 Si 0.3 S 3 的物理化学特征

摘要 Cu2(Sn,Si)S3 是一种潜在的材料，可用于在薄膜太阳能电池器件中获得具有成本效益且无毒的吸收剂。此外，根据 Si/(Sn + Si) 比，可以在 1.1 eV 至 1.5 eV 的整个最佳范围内实现可调带隙。我们报告了从 Cu-Sn-Si 前驱体开始，通过共溅射-退火路线合成 Cu2(Sn,Si)S3 薄膜。薄膜由紧密堆积的颗粒组成。X 射线衍射和拉曼光谱的结合证实了具有单斜结构的 Cu2Sn0.7Si0.3S3 固溶体的形成。Cu2SnS3 的存在也在基板附近得到证实，这可能是由于 Cu2SnS3 和 Cu2(Sn,Si)S3 的形成动力学所致。光学和电学测量表明，用 Si 取代 30% 的 Sn 导致带隙从 0.9 eV 增加到 1。2 eV，同时保持 p 型导电性。基于这些结果，可以得出结论，Cu2(Sn,Si)S3 化合物是一种很有前途的吸收剂，可用于薄膜太阳能电池应用。