Abstract The synthesis of homogeneously dispersed SiC nanowires in the ceramic powders arouses considerable interests due to its potential applications as reinforcements in the ceramic matrix composites. Herein, we reported a facile and novel approach to in situ synthesize homogeneously dispersed SiC nanowires in the reaction sintered silicon-based ceramic powders. The as-synthesized nanowires exhibited the single-crystalline 3C-SiC with diameters of 50–200 nm and lengths ranging from tens to over 100 µm. Combining further experimental results and thermodynamics analysis, we demonstrated the importance of the free silicon for the in situ synthesis of SiC nanowires in the reaction sintered silicon-based ceramic powders, since it increased the equilibrium vapor pressure of SiO gaseous product in the system.

中文翻译：

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在反应烧结的硅基陶瓷粉末中原位合成均匀分散的 SiC 纳米线

摘要 由于在陶瓷基复合材料中作为增强材料的潜在应用，在陶瓷粉末中合成均匀分散的 SiC 纳米线引起了相当大的兴趣。在此，我们报道了一种在反应烧结的硅基陶瓷粉末中原位合成均匀分散的 SiC 纳米线的简便而新颖的方法。合成的纳米线呈现出单晶 3C-SiC，直径为 50-200 nm，长度范围从几十到超过 100 µm。结合进一步的实验结果和热力学分析，我们证明了游离硅对于反应烧结硅基陶瓷粉末中 SiC 纳米线的原位合成的重要性，因为它增加了系统中 SiO 气态产物的平衡蒸气压。