Abstract This work proposed a smart approach to fabricate highly nonlinear SnOx-Ta2O5 thin film varistors. During processing, tin oxide films in nanoscaled thickness were firstly deposited onto electrically conducting silicon wafers through radio frequency magnetron sputtering a sintered tin oxide ceramic target; and then, the obtained films were hot-dipped in Ta2O5 powder in a Muffle oven for 60 min at different temperatures. With the hot-dipping temperature increased from 300 to 800 °C, the nonlinear coefficient of the samples increased first and then decreased, reaching the maximum of 16.8 at 600 °C, which is a record in all the reported SnO2-based varistors and comparable with those of the most extensively investigated and commonly commercially applied ZnO-based ceramic varistors. Correspondingly, the leakage current decreased first and then increased, obtaining the minimum of 4.1 mA/cm2. Besides, the breakdown electric field increased first and then decreased, presenting the maximum of 0.0313 V/nm. Such nanoscaled thin film varistors would be promising in electrical and electronic devices working in low-voltage.

中文翻译：

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不同温度下热浸氧化锡薄膜在Ta 2 O 5 粉末中制备的高度非线性压敏电阻

摘要 这项工作提出了一种制造高度非线性 SnOx-Ta2O5 薄膜压敏电阻的智能方法。在加工过程中，首先通过射频磁控溅射烧结氧化锡陶瓷靶在导电硅片上沉积纳米级厚度的氧化锡薄膜；然后，将获得的薄膜在马弗炉中在不同温度下热浸在 Ta2O5 粉末中 60 分钟。随着热浸温度从 300°C 升高到 800°C，样品的非线性系数先增大后减小，在 600°C 时达到最大值 16.8，这是所有报道的 SnO2 基压敏电阻和可比的记录与最广泛研究和商业应用最广泛的 ZnO 基陶瓷压敏电阻器。相应地，漏电流先减小后增大，最小值为 4.1 mA/cm2。此外，击穿电场先增大后减小，最大值为0.0313 V/nm。这种纳米级薄膜压敏电阻在低压工作的电气和电子设备中很有前景。