Abstract The widely commercial used transparent conductive oxides (TCOs), such as ITO, combine ideal transmittance in visible light region and low electrical resistivity. However, its transmittance in near infrared (NIR) region is very limited. In contrast, AZO as a promising candidate of ITO possesses better optical transmittance in NIR region but presents poor electrical properties. In order to extend the applications of TCO materials in NIR region, ITO/AZO multilayers were designed in this work. The influence of the AZO monolayer thickness on the film's optoelectronic properties in NIR region was investigated. The results show that with AZO monolayer thickness increasing, the film's electrical resistivity increases, but always lower than that of single AZO film. In addition, the film's transmittance in NIR region is greatly improved by increasing AZO monolayer thickness. In point of the figure of merit, all ITO/AZO multilayers present enhanced optoelectronic properties in NIR region with respect to single ITO film or single AZO film. When AZO monolayer thickness is about 6 nm, the optimal film is realized. Its resistivity is around 8.6 × 10 −3 Ω cm, while its average transmittance in NIR region reaches 90.0%.

中文翻译：

---

通过射频磁控溅射沉积的导电 ITO/AZO 多层膜在红外区域的高透射率

摘要 广泛商业使用的透明导电氧化物 (TCO)，例如 ITO，结合了理想的可见光区透射率和低电阻率。然而，它在近红外（NIR）区域的透射率非常有限。相比之下，AZO 作为 ITO 的有前途的候选者，在 NIR 区域具有更好的光学透射率，但电学性能较差。为了扩展 TCO 材料在 NIR 区域的应用，本工作设计了 ITO/AZO 多层膜。研究了 AZO 单层厚度对薄膜在 NIR 区域的光电性能的影响。结果表明，随着AZO单层厚度的增加，薄膜的电阻率增加，但始终低于单层AZO薄膜的电阻率。此外，电影《通过增加 AZO 单层厚度，大大提高了 NIR 区域的透射率。就品质因数而言，相对于单层 ITO 薄膜或单层 AZO 薄膜，所有 ITO/AZO 多层膜在 NIR 区域都表现出增强的光电特性。当 AZO 单层厚度约为 6 nm 时，实现了最佳薄膜。其电阻率约为 8.6 × 10 -3 Ω cm，而其在 NIR 区域的平均透射率达到 90.0%。