A new class of ternary heterostructures consisting of a reduced graphene oxide, molybdenum disulfide, and tungsten disulfide (rGO‐MoS₂‐WS₂) is prepared through a simple chemical method. According to Raman and X‐ray photoelectron spectroscopy, a MoS₂/WS₂ heterostructure is uniformly formed on the conductive rGO support. Furthermore, rGO‐MoS₂‐WS₂ possesses s large surface area of 109 m² g⁻¹ and a hierarchical pore architecture. When serving as the electrode for supercapacitors, rGO‐MoS₂‐WS₂ exhibits pseudocapacitive behavior in a KOH solution. It is found that rGO‐MoS₂‐WS₂ displays a specific capacitance (C_s) of 365 F g⁻¹ at 1 A g⁻¹, which is much higher than those of single TMD (MoS₂ or WS₂)‐based composites. The enhanced electrochemical performance of rGO‐MoS₂‐WS₂ is attributed to the lower internal resistance through heterostructure formation, the wide range of TMD oxidation states, and uniform distribution of the few‐layered TMD nanosheets on the rGO surface. Furthermore, the optimal loading amount of MoS₂/WS₂ heterostructure in the composite is investigated. To demonstrate its practical application, rGO‐MoS₂‐WS₂ is used as a positive electrode for an asymmetric supercapacitor (ASC). The maximum energy density of the ASC device is 15 Wh kg⁻¹ at a power density of 373 W kg⁻¹. Furthermore, the device remains approximately 70 % of the initial C_s value after 3000 cycles, which shows the excellent cycling stability.

中文翻译：

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MoS2 / WS2 /石墨烯异质结构的三元复合纳米片作为超级电容器的高性能阴极材料

通过简单的化学方法制备了由还原型氧化石墨烯，二硫化钼和二硫化钨组成的新型三元异质结构（rGO -MoS ₂ -WS ₂）。根据拉曼光谱和X射线光电子能谱，MoS ₂ / WS ₂异质结构均匀地形成在导电的rGO载体上。此外，rGO -MoS ₂ -WS ₂具有109 m ²  g ^-1的大表面积和分层的孔结构。当用作超级电容器的电极时，rGO -MoS ₂ -WS ₂在KOH溶液中表现出伪电容行为。发现rGO‐MoS ₂‐WS ₂在1 A g ^-1下显示的比电容（C _s）为365 F g ^-1，比单个基于TMD（MoS ₂或WS ₂）的复合材料的比电容高得多。rGO -MoS ₂ -WS ₂增强的电化学性能归因于通过异质结构形成降低的内阻，TMD氧化态的广泛范围以及rGO表面上几层TMD纳米片的均匀分布。此外，研究了复合材料中MoS ₂ / WS ₂异质结构的最佳负载量。为了演示其实际应用，rGO-MoS ₂‐WS ₂用作非对称超级电容器（ASC）的正电极。所述ASC装置的最大能量密度为15瓦时千克^-1在373公斤w ^的功率密度^-1。此外，该器件在3000次循环后仍保持约为初始C _s值的70％，这显示出出色的循环稳定性。