Improved Electron Transport with Reduced Contact Resistance in N‐Doped Polymer Field‐Effect Transistors with a Dimeric Dopant,Macromolecular Rapid Communications

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Improved Electron Transport with Reduced Contact Resistance in N‐Doped Polymer Field‐Effect Transistors with a Dimeric Dopant
Macromolecular Rapid Communications ( IF 4.2 ) Pub Date : 2018-01-15 , DOI: 10.1002/marc.201700726
Rong Wang _{1,

2} , Yikun Guo ₃ , Di Zhang ₃ , Huiqiong Zhou ₂ , Dahui Zhao ₃ , Yuan Zhang ₁

Affiliation

Attaining control on charge injection properties is significant for meaningful applications of organic field‐effect transistors (OFETs). Here, molecular electron‐doping is applied with an air‐stable dimer dopant for n‐type OFETs based on (naphthalene diimide–diketopyrrolopyrrole) polymer hosts. Through investigating the doping effect on contact and transport properties, it is found that the electron transport increases in n‐doped OFETs at low doping regime with remaining large on/off ratios. These favorable meliorations are reconciled by the mitigated impacts of contact resistance and interfacial traps, as well as the surface morphology exhibiting features of increased ordering. The occurrence of doping in the presence of dimer dopants is evidenced by the observed shift of Fermi level toward vacuum level coupled with compositional analysis. Without applying vacuum‐deposition‐based contact doping, charge injection efficiencies are gained without losing OFET characteristics using the solution‐based methodology.

中文翻译：

具有二聚体掺杂剂的N掺杂聚合物场效应晶体管中改善的电子传输，并降低了接触电阻

对于有机场效应晶体管（OFET）的有意义的应用，控制电荷注入的特性非常重要。在这里，基于（萘二酰亚胺-二酮吡咯并吡咯）聚合物主体的n型OFETs ，对空气稳定的二聚体掺杂剂进行了分子电子掺杂。通过研究掺杂对接触和传输性能的影响，发现电子传输在n在低掺杂状态下掺杂的OFET，并保持较大的开/关比。接触电阻和界面陷阱的减轻影响以及表面形态表现出有序增加的特征，使这些有利的优点得以协调。通过观察到的费米能级向真空能级的转变以及成分分析证明了在二聚体掺杂剂存在下掺杂的发生。如果不使用基于真空沉积的接触掺杂，则可以使用基于解决方案的方法来获得电荷注入效率，而不会失去OFET特性。

更新日期：2018-01-15

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