Self‐Powered Si/CdS Flexible Photodetector with Broadband Response from 325 to 1550 nm Based on Pyro‐phototronic Effect: An Approach for Photosensing below Bandgap Energy,Advanced Materials

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Self‐Powered Si/CdS Flexible Photodetector with Broadband Response from 325 to 1550 nm Based on Pyro‐phototronic Effect: An Approach for Photosensing below Bandgap Energy
Advanced Materials ( IF 27.4 ) Pub Date : 2018-01-15 , DOI: 10.1002/adma.201705893
Yejing Dai _{1,

2} , Xingfu Wang ₁ , Wenbo Peng _{1,

3} , Cheng Xu ₁ , Changsheng Wu ₁ , Kai Dong ₁ , Ruiyuan Liu ₁ , Zhong Lin Wang _{1,

4}

Affiliation

Cadmium sulfide (CdS) has received widespread attention as the building block of optoelectronic devices due to its extraordinary optoelectronic properties, low work function, and excellent thermal and chemical stability. Here, a self‐powered flexible photodetector (PD) based on p‐Si/n‐CdS nanowires heterostructure is fabricated. By introducing the pyro‐phototronic effect derived from wurtzite structured CdS, the self‐powered PD shows a broadband response range, even beyond the bandgap limitation, from UV (325 nm) to near infrared (1550 nm) under zero bias with fast response speed. The light‐induced pyroelectric potential is utilized to modulate the optoelectronic processes and thus improve the photoresponse performance. Lasers with different wavelengths have different effects on the self‐powered PDs and corresponding working mechanisms are carefully investigated. Upon 325 nm laser illumination, the rise time and fall time of the self‐powered PD are 245 and 277 µs, respectively, which are faster than those of most previously reported CdS‐based nanostructure PDs. Meanwhile, the photoresponsivity R and specific detectivity D* regarding to the relative peak‐to‐peak current are both enhanced by 67.8 times, compared with those only based on the photovoltaic effect‐induced photocurrent. The self‐powered flexible PD with fast speed, stable, and broadband response is expected to have extensive applications in various environments.

中文翻译：

基于热释光效应的具有325至1550 nm宽带响应的自供电Si / CdS柔性光电探测器：一种在带隙能量以下进行光敏的方法

硫化镉（CdS）由于其非凡的光电性能，低的功函以及出色的热稳定性和化学稳定性而作为光电器件的组成部分而受到了广泛的关注。在这里，制造了基于p-Si / n-CdS纳米线异质结构的自供电柔性光电探测器（PD）。通过引入源自纤锌矿结构CdS的热释光效应，自供电PD在零偏压下以快速响应速度显示了从UV（325 nm）到近红外（1550 nm）的宽带响应范围，甚至超出了带隙限制。。光诱导的热电势被用来调制光电过程，从而提高光响应性能。波长不同的激光对自供电PD的影响不同，并且仔细研究了相应的工作机制。在325 nm激光照射下，自供电PD的上升时间和下降时间分别为245和277 µs，这比大多数以前报道的基于CdS的纳米结构PD的上升时间快。同时，光响应性与仅基于光电效应感应的光电流相比，相对于峰-峰值电流的R和比探测比D *均提高了67.8倍。具有快速，稳定和宽带响应能力的自供电灵活PD有望在各种环境中得到广泛的应用。

更新日期：2018-01-15

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