The capability to directly build atomically thin transition metal dichalcogenide (TMD) devices by chemical synthesis offers important opportunities to achieve large‐scale electronics and optoelectronics with seamless interfaces. Here, a general approach for the chemical synthesis of a variety of TMD (e.g., MoS₂, WS₂, and MoSe₂) device arrays over large areas is reported. During chemical vapor deposition, semiconducting TMD channels and metallic TMD/carbon nanotube (CNT) hybrid electrodes are simultaneously formed on CNT‐patterned substrate, and then coalesce into seamless devices. Chemically synthesized TMD devices exhibit attractive electrical and mechanical properties. It is demonstrated that chemically synthesized MoS₂–MoS₂/CNT devices have Ohmic contacts between MoS₂/CNT hybrid electrodes and MoS₂ channels. In addition, MoS₂–MoS₂/CNT devices show greatly enhanced mechanical stability and photoresponsivity compared with conventional gold‐contacted devices, which makes them suitable for flexible optoelectronics. Accordingly, a highly flexible pixel array based on chemically synthesized MoS₂–MoS₂/CNT photodetectors is applied for image sensing.

中文翻译：

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化学合成大规模，无缝过渡金属双硫族化物电子学的通用方法

通过化学合成直接构建原子薄的过渡金属二硫化二氢（TMD）器件的能力为实现具有无缝接口的大规模电子学和光电子学提供了重要的机会。在此，报告了在大面积上化学合成各种TMD（例如MoS ₂，WS ₂和MoSe ₂）器件阵列的一般方法。在化学气相沉积过程中，半导体TMD通道和金属TMD /碳纳米管（CNT）混合电极同时形成在CNT图案化的基底上，然后聚集成无缝器件。化学合成的TMD器件具有吸引人的电气和机械性能。证明了化学合成的MoS ₂ -MoS₂ / CNT器件在MoS ₂ / CNT混合电极和MoS ₂通道之间具有欧姆接触。此外，与传统的金接触器件相比，MoS ₂ -MoS ₂ / CNT器件显示出大大增强的机械稳定性和光响应性，使其适合于柔性光电。因此，基于化学合成的MoS ₂ -MoS ₂ / CNT光电探测器的高度灵活的像素阵列被应用于图像感测。