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Polymer‐Passivated Inorganic Cesium Lead Mixed‐Halide Perovskites for Stable and Efficient Solar Cells with High Open‐Circuit Voltage over 1.3 V
Advanced Materials ( IF 27.4 ) Pub Date : 2018-01-15 , DOI: 10.1002/adma.201705393 Qingsen Zeng 1 , Xiaoyu Zhang 1, 2 , Xiaolei Feng 3 , Siyu Lu 1 , Zhaolai Chen 4 , Xue Yong 5 , Simon A. T. Redfern 6 , Haotong Wei 4 , Haiyu Wang 7 , Huaizhong Shen 1 , Wei Zhang 2 , Weitao Zheng 2 , Hao Zhang 1 , John S. Tse 5 , Bai Yang 1
Advanced Materials ( IF 27.4 ) Pub Date : 2018-01-15 , DOI: 10.1002/adma.201705393 Qingsen Zeng 1 , Xiaoyu Zhang 1, 2 , Xiaolei Feng 3 , Siyu Lu 1 , Zhaolai Chen 4 , Xue Yong 5 , Simon A. T. Redfern 6 , Haotong Wei 4 , Haiyu Wang 7 , Huaizhong Shen 1 , Wei Zhang 2 , Weitao Zheng 2 , Hao Zhang 1 , John S. Tse 5 , Bai Yang 1
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Cesium‐based trihalide perovskites have been demonstrated as promising light absorbers for photovoltaic applications due to their superb composition stability. However, the large energy losses (Eloss) observed in inorganic perovskite solar cells has become a major hindrance impairing the ultimate efficiency. Here, an effective and reproducible method of modifying the interface between a CsPbI2Br absorber and polythiophene hole‐acceptor to minimize the Eloss is reported. It is demonstrated that polythiophene, deposited on the top of CsPbI2Br, can significantly reduce electron‐hole recombination within the perovskite, which is due to the electronic passivation of surface defect states. In addition, the interfacial properties are improved by a simple annealing process, leading to significantly reduced energy disorder in polythiophene and enhanced hole‐injection into the hole‐acceptor. Consequently, one of the highest power conversion efficiency (PCE) of 12.02% from a reverse scan in inorganic mixed‐halide perovskite solar cells is obtained. Modifying the perovskite films with annealing polythiophene enables an open‐circuit voltage (VOC) of up to 1.32 V and Eloss of down to 0.5 eV, which both are the optimal values reported among cesium‐lead mixed‐halide perovskite solar cells to date. This method provides a new route to further improve the efficiency of perovskite solar cells by minimizing the Eloss.
中文翻译：
聚合物钝化无机铯铅混合卤化物钙钛矿，用于稳定高效的太阳能电池，具有超过1.3 V的高开路电压
铯基三卤化物钙钛矿由于其出色的组成稳定性，已被证明是用于光伏应用的有前途的光吸收剂。然而，在无机钙钛矿太阳能电池中观察到的大能量损失（E损失）已经成为损害最终效率的主要障碍。在此报道了一种有效且可重现的方法，用于修饰CsPbI 2 Br吸收剂和聚噻吩空穴受体之间的界面，以最大程度地减少E损失。结果表明，聚噻吩沉积在CsPbI 2的顶部溴可显着减少钙钛矿内部的电子-空穴复合，这是由于表面缺陷态的电子钝化所致。此外，通过简单的退火工艺可以改善界面性能，从而大大降低了聚噻吩中的能量紊乱并增强了向空穴受体中的空穴注入。因此，在无机混合卤化物钙钛矿太阳能电池中，通过反向扫描获得了12.02％的最高功率转换效率（PCE）之一。用退火的聚噻吩改性钙钛矿薄膜可实现高达1.32 V的开路电压（V OC）和E损耗低至0.5 eV，这都是迄今为止铯-铅混合卤化物钙钛矿太阳能电池中报告的最佳值。该方法为通过最小化E损耗提供了进一步提高钙钛矿型太阳能电池效率的新途径。
更新日期：2018-01-15
中文翻译：
聚合物钝化无机铯铅混合卤化物钙钛矿，用于稳定高效的太阳能电池，具有超过1.3 V的高开路电压
铯基三卤化物钙钛矿由于其出色的组成稳定性，已被证明是用于光伏应用的有前途的光吸收剂。然而，在无机钙钛矿太阳能电池中观察到的大能量损失（E损失）已经成为损害最终效率的主要障碍。在此报道了一种有效且可重现的方法，用于修饰CsPbI 2 Br吸收剂和聚噻吩空穴受体之间的界面，以最大程度地减少E损失。结果表明，聚噻吩沉积在CsPbI 2的顶部溴可显着减少钙钛矿内部的电子-空穴复合，这是由于表面缺陷态的电子钝化所致。此外，通过简单的退火工艺可以改善界面性能，从而大大降低了聚噻吩中的能量紊乱并增强了向空穴受体中的空穴注入。因此，在无机混合卤化物钙钛矿太阳能电池中，通过反向扫描获得了12.02％的最高功率转换效率（PCE）之一。用退火的聚噻吩改性钙钛矿薄膜可实现高达1.32 V的开路电压（V OC）和E损耗低至0.5 eV，这都是迄今为止铯-铅混合卤化物钙钛矿太阳能电池中报告的最佳值。该方法为通过最小化E损耗提供了进一步提高钙钛矿型太阳能电池效率的新途径。
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