Surface Modification of V–VI Semiconductors Using Exchange Reactions within ALD Half‐Cycles,Advanced Materials Interfaces

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Surface Modification of V–VI Semiconductors Using Exchange Reactions within ALD Half‐Cycles
Advanced Materials Interfaces ( IF 4.3 ) Pub Date : 2018-01-15 , DOI: 10.1002/admi.201701155
Christoph W. Wiegand _{1,

2} , Robert Zierold ₁ , René Faust ₁ , Darius Pohl ₂ , Andy Thomas ₂ , Bernd Rellinghaus ₂ , Kornelius Nielsch _{1,

3}

Affiliation

The behaviors of tellurium and selenium atomic layer deposition vapor precursors, namely, Te(SiEt₃)₂ and Se(SiEt₃)₂, exposed to different V–VI semiconductor surfaces are reported. The interactions of the precursors with the substrates are monitored in situ with a quartz crystal microbalance (QCM) setup. Specifically, both the utilized metal–organic precursors interact with chalcogenide surfaces but differ in their reaction behaviors. Indeed, exchanged Te diffuses into the selenium‐containing substrate, whereas Se only exchanges with the top surface of the substrate. Transmission electron micrsocopy (TEM) and energy‐dispersive X‐ray spectroscopy (EDX/EDXS) analysis of the topological insulating nanowires reveals the single precursor interactions, which support the QCM data analysis, and provides insight into the morphological and crystalline structures of the altered substrates.

中文翻译：

使用ALD半环内的交换反应对V–VI半导体进行表面修饰

碲和硒原子层沉积蒸气前驱体Te（SiEt ₃）₂和Se（SiEt ₃）_2的行为据报道，暴露于不同的V–VI半导体表面。用石英晶体微量天平（QCM）装置就地监测前体与基材的相互作用。具体而言，两种利用的金属有机前体均与硫属化物表面相互作用，但其反应行为有所不同。确实，交换的Te扩散到含硒的基质中，而Se仅与基质的上表面交换。透射电镜（TEM）和能量色散X射线光谱（EDX / EDXS）对拓扑绝缘纳米线的分析揭示了单个前体相互作用，这支持了QCM数据分析，并提供了对蚀变的形态和晶体结构的洞察力基材。

更新日期：2018-01-15

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