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Suppression of Grain Boundary Scattering in Multifunctional p‐Type Transparent γ‐CuI Thin Films due to Interface Tunneling Currents
Advanced Materials Interfaces ( IF 4.3 ) Pub Date : 2018-01-15 , DOI: 10.1002/admi.201701411 Max Kneiß 1 , Chang Yang 1 , José Barzola-Quiquia 1 , Gabriele Benndorf 1 , Holger von Wenckstern 1 , Pablo Esquinazi 1 , Michael Lorenz 1 , Marius Grundmann 1
Advanced Materials Interfaces ( IF 4.3 ) Pub Date : 2018-01-15 , DOI: 10.1002/admi.201701411 Max Kneiß 1 , Chang Yang 1 , José Barzola-Quiquia 1 , Gabriele Benndorf 1 , Holger von Wenckstern 1 , Pablo Esquinazi 1 , Michael Lorenz 1 , Marius Grundmann 1
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Transparent p‐type conductive γ‐CuI thin films typically exhibit unexpectedly high hole mobilities in the range of 10 cm2 V−1 s−1 even when heavily textured. To explain this phenomenon, the transport properties of such thin films are investigated. The temperature‐dependent resistivities of the textured (111)‐oriented films with different carrier concentration are fitted using the fluctuation‐induced tunneling conductivity (FITC) model in series with a power law. The FITC model describes barriers at the grain boundaries whereas the power law considers the scattering in the metallic interior of the grains. Magnetoresistance measurements performed on a reactively DC‐sputtered thin film at low temperatures (T < 8 K) suggest a 2D weak antilocalization effect with phase coherence lengths of about 50 nm. This is corroborated by a typical logarithmic temperature dependence of the zero‐field conductance. An n‐type inversion layer or a defect band at the interfaces of the grains as origin of the 2D carrier system and the barriers at the grain boundaries is proposed. This leads to a conclusive description of the electrical transport properties of γ‐CuI thin films and explains the high hole mobilities which are due to a suppressed backscattering at the grain boundaries in the presence of tunneling channels.
中文翻译：
界面隧穿电流对多功能p型透明γ-CuI薄膜晶粒边界散射的抑制
透明的p型导电γ-CuI薄膜即使呈现出强烈的纹理，通常也表现出出乎意料的高空穴迁移率，其迁移率在10 cm 2 V -1 s -1范围内。为了解释这种现象，研究了这种薄膜的传输性能。使用波动诱导隧穿电导率（FITC）模型和幂律，拟合了具有不同载流子浓度的织构（111）取向薄膜的温度相关电阻率。FITC模型描述了晶界处的势垒，而幂律则考虑了晶粒金属内部的散射。在低温下对反应性DC溅射薄膜进行磁阻测量（T<8 K）表明2D弱抗定位作用，相位相干长度约为50 nm。零场电导的典型对数温度依赖性证明了这一点。提出了作为二维载体系统起源的晶粒界面处的n型反型层或缺陷带以及晶界处的势垒。这导致对γ-CuI薄膜电传输特性的结论性描述，并解释了高空穴迁移率，这是由于在存在隧穿通道的情况下，晶界处的反向散射受到抑制而导致的。
更新日期：2018-01-15
中文翻译：
界面隧穿电流对多功能p型透明γ-CuI薄膜晶粒边界散射的抑制
透明的p型导电γ-CuI薄膜即使呈现出强烈的纹理，通常也表现出出乎意料的高空穴迁移率，其迁移率在10 cm 2 V -1 s -1范围内。为了解释这种现象，研究了这种薄膜的传输性能。使用波动诱导隧穿电导率（FITC）模型和幂律，拟合了具有不同载流子浓度的织构（111）取向薄膜的温度相关电阻率。FITC模型描述了晶界处的势垒，而幂律则考虑了晶粒金属内部的散射。在低温下对反应性DC溅射薄膜进行磁阻测量（T<8 K）表明2D弱抗定位作用，相位相干长度约为50 nm。零场电导的典型对数温度依赖性证明了这一点。提出了作为二维载体系统起源的晶粒界面处的n型反型层或缺陷带以及晶界处的势垒。这导致对γ-CuI薄膜电传输特性的结论性描述，并解释了高空穴迁移率，这是由于在存在隧穿通道的情况下，晶界处的反向散射受到抑制而导致的。
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