Organic thin-film transistors (OTFTs) can be fabricated at moderate temperatures and through cost-effective solution-based processes on a wide range of low-cost flexible and deformable substrates. Although the charge mobility of state-of-the-art OTFTs is superior to that of amorphous silicon and approaches that of amorphous oxide thin-film transistors (TFTs), their operational stability generally remains inferior and a point of concern for their commercial deployment. We report on an exhaustive characterization of OTFTs with an ultrathin bilayer gate dielectric comprising the amorphous fluoropolymer CYTOP and an Al₂O₃:HfO₂ nanolaminate. Threshold voltage shifts measured at room temperature over time periods up to 5.9 × 10⁵ s do not vary monotonically and remain below 0.2 V in microcrystalline OTFTs (μc-OTFTs) with field-effect carrier mobility values up to 1.6 cm² V^-1 s^-1. Modeling of these shifts as a function of time with a double stretched-exponential (DSE) function suggests that two compensating aging mechanisms are at play and responsible for this high stability. The measured threshold voltage shifts at temperatures up to 75°C represent at least a one-order-of-magnitude improvement in the operational stability over previous reports, bringing OTFT technologies to a performance level comparable to that reported in the scientific literature for other commercial TFTs technologies.

中文翻译：

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稳定的有机薄膜晶体管。

有机薄膜晶体管（OTFT）可以在各种温度范围内，通过经济有效的基于解决方案的工艺在各种低成本的柔性和可变形基板上制造。尽管最先进的OTFT的电荷迁移率优于非晶硅，并且接近非晶氧化物薄膜晶体管（TFT），但是它们的操作稳定性通常仍然较差，并且是其商业应用的关注点。我们报告的OTFT具有包括非晶态含氟聚合物CYTOP和Al ₂ O ₃：HfO ₂纳米层压板的超薄双层栅极电介质的详尽表征。在室温下在5.9×10 ^5的时间段内测得的阈值电压漂移s不会单调变化，并且在场效应载流子迁移率值高达1.6 cm ² V ^-1 s ^-1的微晶OTFT（μc-OTFT）中保持在0.2 V以下。使用双拉伸指数（DSE）函数对这些变化作为时间的函数进行建模表明，两个补偿老化机制正在发挥作用，并为这种高稳定性负责。在高达75°C的温度下测得的阈值电压偏移表示操作稳定性至少比以前的报告提高了一个数量级，使OTFT技术达到了与其他商业化的科学文献中报道的水平相当的性能水平TFTs技术。