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Influence of [6,6]-Phenyl-C61-butyric Acid Methyl Ester doping on Au/CH 3 NH 3 PbI 3 /Au metal-semiconductor-metal (MSM) photoelectric detectors
Materials Letters ( IF 2.7 ) Pub Date : 2018-04-01 , DOI: 10.1016/j.matlet.2018.01.063 Suzhen Luan , Yintao Liu , Yucheng Wang , Renxu Jia
Materials Letters ( IF 2.7 ) Pub Date : 2018-04-01 , DOI: 10.1016/j.matlet.2018.01.063 Suzhen Luan , Yintao Liu , Yucheng Wang , Renxu Jia
Abstract In this manuscript, Au/CH3NH3PbI3/Au metal-semiconductor-metal (MSM) photoelectric detectors with different concentrations of [6,6]-Phenyl-C61-butyric Acid Methyl Ester (PCBM) doping are studied. It is found that with PCBM doping, the zero voltage shifts of MSM detector are inhibited, and the dark currents increase slightly which result in the smaller light-dark current ratio and detectivity. It is speculated that the vacancies in CH3NH3PbI3 are filled by PCBM, and the captured electrons are release. The MSM detector with 0.01 wt% PCBM doping shows high responsivity (35 mA W−1), detectivity (4.126 × 1010 Jones) and response time (
中文翻译：
[6,6]-苯基-C61-丁酸甲酯掺杂对Au/CH 3 NH 3 PbI 3 /Au金属-半导体-金属(MSM)光电探测器的影响
摘要 在本手稿中，研究了不同浓度的 [6,6]-苯基-C61-丁酸甲酯 (PCBM) 掺杂的 Au/CH3NH3PbI3/Au 金属-半导体-金属 (MSM) 光电探测器。结果表明，PCBM掺杂抑制了MSM探测器的零电压漂移，暗电流略有增加，导致明暗电流比和探测率变小。推测 CH3NH3PbI3 中的空位被 PCBM 填充，捕获的电子被释放。具有 0.01 wt% PCBM 掺杂的 MSM 探测器显示出高响应度 (35 mA W−1)、探测率 (4.126 × 1010 Jones) 和响应时间 (
更新日期：2018-04-01
中文翻译：
[6,6]-苯基-C61-丁酸甲酯掺杂对Au/CH 3 NH 3 PbI 3 /Au金属-半导体-金属(MSM)光电探测器的影响
摘要 在本手稿中，研究了不同浓度的 [6,6]-苯基-C61-丁酸甲酯 (PCBM) 掺杂的 Au/CH3NH3PbI3/Au 金属-半导体-金属 (MSM) 光电探测器。结果表明，PCBM掺杂抑制了MSM探测器的零电压漂移，暗电流略有增加，导致明暗电流比和探测率变小。推测 CH3NH3PbI3 中的空位被 PCBM 填充，捕获的电子被释放。具有 0.01 wt% PCBM 掺杂的 MSM 探测器显示出高响应度 (35 mA W−1)、探测率 (4.126 × 1010 Jones) 和响应时间 (
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