Well‐Balanced Ambipolar Conjugated Polymers Featuring Mild Glass Transition Temperatures Toward High‐Performance Flexible Field‐Effect Transistors,Advanced Materials

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Well‐Balanced Ambipolar Conjugated Polymers Featuring Mild Glass Transition Temperatures Toward High‐Performance Flexible Field‐Effect Transistors
Advanced Materials ( IF 27.4 ) Pub Date : 2018-01-12 , DOI: 10.1002/adma.201705286
Keli Shi _{1,

2} , Weifeng Zhang ₁ , Dong Gao ₁ , Shiying Zhang _{1,

3} , Zuzhang Lin _{1,

3} , Ye Zou ₁ , Liping Wang ₃ , Gui Yu _{1,

2}

Affiliation

Conjugated polymers, which can be fabricated by simple processing techniques and possess excellent electrical performance, are key to the fabrication of flexible polymer field‐effect transistors (PFETs) and integrated circuits. Herein, two ambipolar conjugated polymers based on (3E,7E)‐3,7‐bis(2‐oxo‐1H‐pyrrolo[2,3‐b]pyridin‐3(2H)‐ylidene)benzo[1,2‐b:4,5‐b′]difuran‐2,6(3H,7H)‐dione and dithienylbenzothiadiazole units, namely PNBDOPV‐DTBT and PNBDOPV‐DTF2BT, are developed. Both copolymers possess almost planar conjugated backbone conformations and suitable highest occupied molecular orbital (HOMO)/lowest unoccupied molecular orbital (LUMO) energy levels (−5.64/−4.38 eV for PNBDOPV‐DTBT and −5.79/−4.48 eV for PNBDOPV‐DTF2BT). Note that PNBDOPV‐DTBT has a glass transition temperature (140 °C) lower than the deformation temperature of polyethylene terephthalate (PET), meaning well‐ordered molecular packing can be obtained on PET substrate before its deformation in mild thermal annealing process. Flexible PFETs based on PNBDOPV‐DTBT fabricated on PET substrates exhibit high and well‐balanced hole/electron mobilities of 4.68/4.72 cm² V⁻¹ s⁻¹ under ambient conditions. After the further modification of Au source/drain electrodes with 1‐octanethiol self‐assembled monolayers, impressively high and well‐balanced hole/electron mobilities up to 5.97/7.07 cm² V⁻¹ s⁻¹ are achieved in the flexible PFETs. Meanwhile, flexible complementary‐like inverters based on PNBDOPV‐DTBT on PET substrate also afford a much high gain of 148. The device performances of both the PFETs and inverters are among the highest values for ambipolar conjugated polymers reported to date.

中文翻译：

具有良好平衡的双极性共轭聚合物，具有温和的玻璃化转变温度，可实现高性能的柔性场效应晶体管

共轭聚合物可以通过简单的加工技术制造，并具有出色的电气性能，是制造柔性聚合物场效应晶体管（PFET）和集成电路的关键。本文中，基于（3 E，7 E）-3,7-双（2-氧代-1 H-吡咯并[2,3 - b ]吡啶-3（2 H）-亚萘基）苯并[1 ]的两种双极性共轭聚合物，2‐ b：4,5 ‐ b′ ]二呋喃‐2,6（3H，7H）‐二酮和二噻吩基苯并噻二唑单元，即PNBDOPV‐DTBT和PNBDOPV‐DTF2BT，被开发出来。二者共聚物具有几乎平面的共轭主链构象和合适的最高占据分子轨道（HOMO）/最低未占分子轨道（LUMO）能级（-5.64 / -4.38电子伏特为PNBDOPV-DTBT和-5.79 / -4.48电子伏特为PNBDOPV-DTF2BT）。请注意，PNBDOPV-DTBT的玻璃化转变温度（140°C）低于聚对苯二甲酸乙二醇酯（PET）的变形温度，这意味着在PET基板在温和的热退火过程中变形之前，可以在其上获得有序的分子堆积。在PET基板上制造的基于PNBDOPV-DTBT的柔性PFET具有4.68 / 4.72 cm ² V ^-1 s的高且均衡的空穴/电子迁移率^-1在环境条件下。用1-辛硫醇自组装单层进一步修饰Au源/漏电极后，在柔性PFET中获得了令人印象深刻的高且平衡良好的空穴/电子迁移率，最高可达5.97 / 7.07 cm ² V ^-1 s ^-1。同时，在PET基板上基于PNBDOPV-DTBT的柔性互补类反相器也可提供148的高增益。迄今为止，PFET和反相器的器件性能均是双极性共轭聚合物的最高值之一。

更新日期：2018-01-12

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